Raúl Rengel Estévez
Área de Electrónica. Departamento de Física Aplicada
 
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Publications (JCR)

[36] Rengel R., Castelló O., Pascual E., Martín M. J., and Iglesias J. M., “Monte Carlo study of noise velocity fluctuations and microscopic carrier transport in monolayer transition metal dichalcogenides”, Journal of Physics D: Applied Physics, 53, 395102 (2020)
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[35] Iglesias J. M., Pascual E., Martín M. J., and Rengel R., “Relevance of collinear processes to the ultrafast dynamics of photoexcited carriers in graphene”, Physica E: Low-dimensional Systems and Nanostructures, 123, 114211 (2020)
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[34] Pascual E., Iglesias J. M., Martín M. J., and Rengel R., “Electronic transport and noise characterization in MoS2″, Semiconductor Science and Technology, 35, 055021 (2020)
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[33] Iglesias J. M., Pascual E., Hamham E. M., Martín M. J., and Rengel R., “Interband scattering-induced ambipolar transport in graphene”, Semiconductor Science and Technology, 34, 065011 (2019)
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[32] Feijoo P. C., Pasadas F., Iglesias J. M., Hamham E. M., Rengel R., and Jiménez D., ”Radio Frequency Performance Projection and Stability Trade-off of h-BN Encapsulated Graphene Field-Effect Transistors”, IEEE Transactions on Electron Devices, 66, 1567-1573 (2019)
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[31] Iglesias J. M., Hamham E. M., Pascual E., and Rengel R., ”Monte Carlo investigation of noise and high-order harmonic extraction in graphene”, Semiconductor Science and Technology, 33, 124012 (2018)
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[30] Hamham E. M., Iglesias J. M., Pascual E., Martín M. J., and Rengel R., ”Impact of the hot phonon effect on electronic transport in monolayer silicene”, Journal of Physics D: Applied Physics, 51, 415102 (2018)
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[29] Rengel R., Iglesias J. M., Hamham E. M., and Martín M. J., ”Damping of acoustic flexural phonons in silicene: influence on high-field electronic transport”, Semiconductor Science and Technology, 33, 065011 (2018)
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[28] Feijoo P. C., Pasadas F., Iglesias J. M., Martín M. J., Rengel R., Li C., Kim W., Riikonen J., Lipsanen H. and Jiménez D., ”Scaling of graphene field-effect transistors supported on hexagonal boron nitride: radio-frequency stability as a limiting factor”, Nanotechnology, 28, 485203 (2017)
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[27] Iglesias J. M., Rengel R., Hamham E. M., Pascual E. and Martín M. J., ”Interplay of out-of-equilibrium phonons and self-heating under high field transport conditions in graphene”, Journal of Physics D: Applied Physics , 50, 305101 (2017)
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[26] Iglesias J. M., Martín M. J., Pascual E. and Rengel R., ”Substrate influence on the early relaxation stages of photoexcited carriers in monolayer graphene”, Applied Surface Science , 424, 52-57 (2017)
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[25] Rengel R., Iglesias J. M., Pascual E. and Martín M. J., ”A balance equations approach for the study of the dynamic response and electronic noise in graphene”, Journal of Applied Physics 121, 185705 (2017)
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[24] Rengel R., Iglesias J. M., Pascual E., and Martín M. J.,”Noise temperature in graphene at high frequencies”, Semiconductor Science and Technology 31, 075001 (2016)
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[23] Iglesias J. M., Martín M. J., Pascual E. and Rengel R.,”Spectral density of velocity fluctuations under switching field conditions in graphene”, Journal of Statistical Mechanics: Theory and Experiment 2016, 054018 (2016)
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[22] Iglesias J. M., Martín M. J., Pascual E. and Rengel R.,”Hot carrier and hot phonon coupling during ultrafast relaxation of photoexcited electrons in graphene”, Applied Physics Letters 108, 043105 (2016)
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[21] Rengel R., Pascual E. and Martín M. J.,”Influence of the substrate on the diffusion coefficient and the momentum relaxation in graphene: The role of surface polar phonons”, Applied Physics Letters 104, 233107 (2014)
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[20] Martín M. J., Couso, C., Pascual E. y Rengel R., ”Monte Carlo Study of Dopant-Segregated Schottky Barrier SoI MOSFETs: Enhancement of the RF Performance”, IEEE Trans. Electron Dev. 99, 3955 (2014)
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[19] Rengel R. and Martín M. J.,”Harmonic distortion in laterally asymmetric channel metal-oxide-semiconductor field-effect transistors operating in the linear regime”, International Journal of Numerical Modelling 27, 792 (2014)
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[18] Rengel R. and Martín M. J.,”Diffusion coefficient, correlation function and power spectral density of velocity fluctuations in monolayer graphene”, Journal of Applied Physics 114, 143702 (2013)
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[17] Martín M. J., Pascual E. and Rengel R.,”RF dynamic and noise performance of Metallic Source/Drain SOI n-MOSFETs”, Solid-State Electronics 73,  64 (2012)
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[16] Rengel R., Martín M. J. and Danneville F., “Microscopic modelling of RF noise in Laterally Asymmetric Channel MOSFETs”, IEEE Electron Device Letters 32 72 (2011)
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[15] Rengel R. and Martín M. J., “Electronic transport in Laterally Asymmetric Channel MOSFET for RF analog applications”, IEEE Transactions on Electron Devices 57 2448 (2010)
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[14] Pascual E., Martín M. J., Rengel R., Larrieu G and Dubois E., “Enhanced carrier injection in Schottky contacts using dopant segregation: a Monte Carlo research”, Semiconductor Science and Technology 24 025022 (2009)
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[13] Pascual E., Rengel R. and Martín M. J., “Microscopic modelling of reverse biased Schottky diodes: influence of non-equilibrium transport phenomena”, Semiconductor Science and Technology 22 1003 (2007)
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[12] Lusakowski J., Martín Martínez M. J., Rengel R., González T., Tauk R., Meziani Y. M., Knap W., Boeuf F. and Skotnicki T., “Quasiballistic transport in nanometer Si metal-oxide-semiconductor field-effect transistors: Experimental and Monte Carlo analysis”, Journal of Applied Physics 101 114511 (2007)
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[11] Rengel R., Pascual E. y Martín M. J., “Injected current and quantum transmission coefficient in low Schottky barriers: WKB and Airy approaches ”, IEEE Electron Device Letters 28 171 (2007)
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[10] Rengel R., Martín M. J., Dambrine G. y Danneville F., “A Monte Carlo investigation of the RF performance of Partially-Depleted SOI MOSFETs”, Semiconductor Science and Technology 21 273 (2006)
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[9] Rengel R., Martín M. J., González T., Mateos J., Pardo D., Dambrine G., Raskin J.-P. y Danneville F., “A microscopic interpretation of the RF noise performance of fabricated FDSOI MOSFETs”, IEEE Transactions on Electron Devices 53 523 (2006)
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[8] Rengel R., González T.. y Martín M. J., “On the influence of space quantization effects on the RF noise behaviour of DG MOSFETs”, Fluctuation and Noise Letters 4 561(2004)
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[7] Rengel R., Pardo D. y Martín M. J., “Towards the nanoscale: Influence of scaling on the electronic trasport and small signal behaviour of MOSFETs”, Nanotechnology 15 S276 (2004)
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[6] Rengel R., Pardo D., y Martín M. J., “A physically-based investigation of the small-signal behaviour of bulk and FD SOI MOSFETs for microwave application”, Semiconductor Science and Technology 19 634 (2004)
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[5] Rengel R., Pardo D. y Martín M. J., “2D Ensemble Monte Carlo modeling of bulk and FDSOI MOSFETs: active layer thickness and noise performance”, Semiconductor Science and Technology 19, S199 (2004)
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[4] Rengel R., Mateos J., Pardo D., González T., Martín M. J., Dambrine G., Danneville F. y Raskin J.-P., “Numerical and experimental study of a 0.25 µm fully-depleted silicon-on-insulator MOSFET: static and dynamic radio-frequency behaviour”, Semiconductor Science and Technology 17 1149 (2002)
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[3] Rengel R., Mateos J., Pardo D., González T. y Martín M. J., “RF noise in a short-channel n-MOSFET: a Monte Carlo study”, Materials Science Forum 384-385 155 (2002)
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[2] Barraud S., Dollfus P., Galdin S., Rengel R., Martin M. J. y Velazquez J. E., “An ionised-impurity scattering model for 3D Monte Carlo device simulation with discrete impurity distribution”, VLSI Design 13 399 (2001)
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[1] Rengel R., Mateos J., Pardo D., González T. y Martín M. J., “Monte Carlo analysis of dynamic and noise performance of submicron MOSFETs at RF and microwave frequencies”, Semiconductor Science and Technology 16 939 (2001)
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