Raúl Rengel Estévez
Área de Electrónica. Departamento de Física Aplicada
 
Foto chips

Congresos

[68] Pascual E., Iglesias J. M., Martín M. J., Rengel R., y Kalna, K., “Monte Carlo Simulations for 2D Materials: Parallelization Strategy and Degeneracy in MoS2″, ImagineNano 2020, Bilbao, España, Septiembre 2020.

[67] Pascual E., Iglesias J. M., Martín M. J., Rengel R., y Kalna, K., “Exploration of a 2D Material Monte Carlo Simulator: Parallelization Strategy and Noise Characterization of MoS2″, Graphene and 2DM Online conference (GO2020), Julio 2020.

[66] Iglesias J. M., Martín M. J., Pascual E., Hamham E. M., y Rengel R., “Collinear scattering in the relaxation dynamics of photoexcited graphene”, 21st International Conference on Electron Dynamics in Semiconductors, EDISON 2019, Nara, Japón, Julio 2019.

[65] Pascual E., Iglesias J. M., Hamham E. M., Martín M. J. y Rengel R., “Microscopic analysis of electronic transport in MoS2″, 21st International Conference on Electron Dynamics in Semiconductors, EDISON 2019, Nara, Japón, Julio 2019.

[64] Iglesias J. M., Pascual E., Hamham E. M., Martín M. J. y Rengel R., “Impact ionization and Auger recombination in graphene under stationary electric fields”, Graphene Conference 2019, Roma, Italia, Junio 2019.

[63] Pascual E., Iglesias J. M., Hamham E. M., Martín M. J. y Rengel R., “Diffusive electronic transport in MoS2: a Monte Carlo study”, 12th Spanish Conference on Electron Devices (CDE2018), Salamanca, España, Noviembre 2018.

[62] Iglesias J. M., Pascual E., Hamham E. M., Martín M. J. y Rengel R., “The Role of interband processes on electronic transport in monolayer graphene”, 12th Spanish Conference on Electron Devices (CDE2018), Salamanca, España, Noviembre 2018.

[61] Feijoo P. C., Iglesias J. M., Hamham E. M., Rengel R. y Jiménez D., “Impact of impurities, defects and residual carrier concentration on high frequency performance of hBN-encapsulated graphene field-effect transistors”, 12th Spanish Conference on Electron Devices (CDE2018), Salamanca, España, Noviembre 2018.

[60] Feijoo P. C., Pasadas F., Iglesias J. M., Martín M. J., Rengel R., Jiménez D., “Investigation of high frequency performance of hBN encapsulated Graphene Field-Effect Transistors”, ImagineNano 2018, Bilbao, España, Marzo 2018.

[59] Hamham E.M., Iglesias J. M., Martín M. J., Rengel R., “A Monte Carlo study of electronic transport in silicene: importance of out-of-equilibrium phonons”, ImagineNano 2018, Bilbao, España, Marzo 2018.

[58] Iglesias J. M., Hamham E.M., Martín M. J., Pascual E., Rengel R., “Monte Carlo simulation of harmonic generation in graphene under AC applied fields, Graphene Week 2017, Atenas, Grecia, Septiembre 2017.

[57] Iglesias J. M., Hamham E.M., Martín M. J., Pascual E., Jiménez D., Feijoo P. C., Pasadas F., Rengel R., “Graphene encapsulated on h-BN: an analysis of mobility and saturation velocity for GFET operation”, 20th International Conference on Electron Dynamics in Semiconductors, EDISON 2017, Buffalo, EE. UU., Julio 2017.

[56] Zurrón O., Iglesias J. M., Rengel R., Martín M. J., Plaja L., “High order harmonic generation in graphene”, CLEO Europe 2017 Conference on Lasers and Electro-Optics, Munich, Alemania, Junio 2017

[55] Zurrón O., Iglesias J. M., Rengel R., Martín M. J. y Plaja L., “Non perturbative high harmonic generation in graphene”, X Reunión Española de Optoelectrónica (OPTOEL 2017), Santiago de Compostela, España, Junio 2017

[54] Feijoo P. C., Pasadas F., Iglesias J. M., Martín M. J., Rengel R., y Jiménez D., “Impact of scattering mechanisms and dimensions scaling in Graphene Field-Effect transistors ”, 11th Spanish Conference on Electron Devices (CDE2017), Barcelona, España, Febrero 2017.

[53] Rengel R., Iglesias J. M., Pascual E. y Martín M. J., “A combined Monte Carlo-balance equations approach for the study of small-signal and noise properties of graphene”, 11th Spanish Conference on Electron Devices (CDE2017), Barcelona, España, Febrero 2017.

[52] Iglesias J. M., Martín M. J., Pascual E. y Rengel R., “Impact of Self-heating and Hot Phonons on the Drift Velocity in Graphene”, 11th Spanish Conference on Electron Devices (CDE2017), Barcelona, España, Febrero 2017.

[51] Zurrón O., Iglesias J. M., Rengel R., Martín M. J., and Plaja L. “High harmonic generation in graphene: Temporal and spectral properties”, Ultrafast Phenomena and Nanophotonics XXI (SPIE OPTO 2017), San Francisco, EE.UU., Enero 2017.

[50] Iglesias J. M., Martín M. J., Pascual E. y Rengel R., “Substrate-dependent Out-of-equilibrium Phonon and Electron Dynamics in Photoexcited Graphene”, 7th International Conference on Advanced Nanomaterials (ANM2016), Aveiro, Portugal, Julio 2016.

[49] Iglesias J. M., Rengel R., Pascual E. y Martín M. J., “Monte Carlo study of velocity fluctuations during transient regimes in graphene”, 7th International Conference on Unsolved Problems on Noise (UPON2015), Barcelona, España, Julio 2015.

[48] Iglesias J. M., Martín M. J., Pascual E. y Rengel R., “A Monte Carlo study on the hot carrier relaxation dynamics in photoexcited graphene”, 19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON19), Salamanca, España, Junio 2015.

[47] Rengel R., Iglesias J. M., Pascual E. y Martín M. J., “Effect of charged impurity scattering on the electron diffusivity and mobility in graphene”, 19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON19), Salamanca, España, Junio 2015.

[46] Iglesias J. M., Martín M. J., y Rengel R., “High electric field transport in graphene: impact of screened coulomb interactions”, Graphene Conference 2015, Bilbao, España, Marzo 2015.

[45] Rengel R., Iglesias J. M., Pascual E. y Martín M. J., “Monte Carlo modelling of mobility and microscopic transport in supported graphene”, 10ª Conferencia de Dispositivos Electrónicos (CDE 2015), Aranjuez, España, Febrero 2015.

[44] Iglesias J. M., Martín M. J., Pascual E. y Rengel R., “Influence of systematic gate alignment variations on static characteristics in DG-SB-MOSFETs”, 10ª Conferencia de Dispositivos Electrónicos (CDE 2015), Aranjuez, España, Febrero 2015.

[43] Rengel R., Pascual E. y Martín M. J., “Impact of the temperature and remote phonon scattering on charge transport in supported graphene”, 15th Trends in Nanotechnology International Conference (TNT 14), Barcelona, España, Octubre 2014.

[42] Rengel R. y Martín M. J., “Influence of the Dispersion Relationship on Electronic Transport in Suspended Graphene”, 18th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON 18), Matsue, Japón, Julio 2013.

[41] Martin M. J.,  Rengel R., de Souza M. y Pavanello M. A., “Impact of the Gate Length on the Transport Properties of Graded-Channel SOI n-MOSFETs”, 18th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures  (EDISON 18), Matsue, Japón, Julio 2013.

[40] Martín M. J., Couso C. y Rengel R., “Velocity and momentum fluctuations in Suspended Monolayer Graphene” 22th International Conference on Noise and Fluctuations (ICNF 2013), Montpellier, Francia, Junio 2013

[39] Rengel R., Couso C. y Martín M. J., “A Monte Carlo Study of Electron Transport in Suspended Monolayer Graphene”, 9ª Conferencia de Dispositivos Electrónicos (CDE 2013), Valladolid, España, Febrero 2013

[38] García J. S., Martín M. J. y Rengel R., “Space quantization effects in Double Gate SB-MOSFETs: role of the active layer thickness”, 9ª Conferencia de Dispositivos Electrónicos (CDE 2013), Valladolid, España, Febrero 2013

[37] Couso C., Rengel R. y Martín M. J., “Schottky Barrier MOSFETs working in the linear regime: A Monte Carlo study of microscopic transport”, 9ª Conferencia de Dispositivos Electrónicos (CDE 2013), Valladolid, España, Febrero 2013

[36] Couso C., Pascual E., Galeote J. M, Martín M. J. y Rengel R. “Effect of the dopant segregation layer on the static characteristics of Schottky-Barrier n-MOSFETs”, 8th International Caribbean Conferencia on Devices, Circuits and Systems (ICCDCS  2012), Playa del Carmen, México, Marzo 2012

[35] Galeote J. M., Pascual E., Rengel R. y Martín M. J. “A Monte Carlo study of the influence of scaling in SB-MOSFETs: static and dynamic characteristics”, 8th European Workshop on Silicon on Insulator Technology, Devices and Circuits (EUROSOI 2012), Montpellier, Francia, Enero de 2012

[34] Pascual E., Rengel R., y Martín M. J., “Influence of the underlap length on the RF noise performance of a Schottky Barrier MOSFET”, 21st International Conference on Noise and Fluctuations (ICNF 2011), Toronto (Canada), Junio de 2011

[33] Galeote J. M., Rengel R., Pascual E., y Martín M. J., “A Monte Carlo model for the study of n-type strained Silicon Schottky devices”, 8ª Conferencia de Dispositivos Electrónicos (CDE 2011), Palma de Mallorca (España), Febrero de 2011

[32] Martín M. J., Rengel R., Galeote J. M., de Souza M. y Pavanello M. A., “Monte Carlo simulation of graded-channel fully depleted SOI nMOSFETs”, 8ª Conferencia de Dispositivos Electrónicos (CDE 2011), Palma de Mallorca (España), Febrero de 2011

[31] Dubois E., Larrieu G., Breil N., Valentin R., Danneville F., Yarekha D. A., Reckinger N., Tang X., Halimaoui A., Rengel R., Pascual E., Pouydebasque A., Wallart X., Godey S., Ratajczak J., Laszcz A., Katcki J., Raskin J.-P., Dambrine G., Cros A. y Skotnicki T., “Metallic source/drain for advanced MOS architectures: from material engineering to device integration”, SINANO-NANOSIL Workshop, Silicon-based CMOS and Beyond-CMOS Nanodevices, Atenas (Grecia), Septiembre 2009

[30] Dubois E., Larrieu G., Breil N., Valentin R., Danneville F., Yarekha D. A., Reckinger N., Tang X., Halimaoui A., Rengel R., Pascual E., Pouydebasque A., Wallart X., Godey S., Ratajczak J., Laszcz A., Katcki J., Raskin J.-P., Dambrine G., Cros A. y Skotnicki T., “Metallic source/drain architecture for advanced MOS technology: an overview of METAMOS results”, 8th Symposium Diagnostics & Yield Advanced Silicon Devices and Technologies for ULSI Era, Varsovia (Polonia), Junio 2009

[29] Rengel R., Martín M. J. y Danneville F., “Comparative study of Laterally Asymmetric Channel and conventional MOSFETs”, 7 ª Conferencia de Dispositivos Electrónicos (CDE 2009), Santiago de Compostela (España), Febrero de 2009

[28] Pascual E., Rengel R. y Martín M. J., “Current drive in n- type Schottky Barrier MOSFETs: a Monte Carlo study”, 7 ª Conferencia de Dispositivos Electrónicos (CDE 2009), Santiago de Compostela (España), Febrero de 2009

[27] Martín M. J., Pascual E., González T. y Rengel R, “Ballistic transport and RF Noise in ultra-scaled SOI MOSFETs: a Monte Carlo study”, Fourth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (EUROSOI 2008), Cork (Irlanda), Enero de 2008

[26] Martín M. J., Rengel R, Pascual E. y González T., “RF Noise and Scaling in Nanometer SOI MOSFETs: Influence of Quasiballistic Transport”, 19th International Conference on Noise and Fluctuations (ICNF 2007), Tokyo (Japón), Septiembre de 2007

[25] Pascual E., Rengel R., Reckinger N., Tang X., Bayot V., Dubois E. y Martín M. J., “Monte Carlo analysis of carrier transport in fabricated back-to-back Schottky diodes: influence of direct quantum tunnelling and temperature”, 15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-15), Tokyo (Japón), Julio de 2007

[24] Martín M. J., Rengel R, Pascual E., Lusakowski J., Knap W. y González T., “Onset of quasi-ballistic transport and mobility degradation in ultra scaled MOSFETs: a Monte Carlo study”, 15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-15), Tokyo (Japón), Julio de 2007

[23] Pascual E., Rengel R. y Martín M. J., “Monte Carlo analysis of quantum tunneling and thermionic transport in a reverse biased Schottky diode”, 6ª Conferencia de Dispositivos Electrónicos (CDE 2007), El Escorial (España), Febrero de 2007

[22] Martín M. J., Rengel R., Pascual E. y González T., “Monte Carlo analysis of carrier transport from diffusive to ballistic regime in nanometer SOI MOSFETs ”, 6ª Conferencia de Dispositivos Electrónicos (CDE 2007), El Escorial (España), Febrero de 2007

[21] Martín M. J., y Rengel R., “A Monte Carlo study of downscaled FD SOI MOSFETs: mean free paths and transit times evaluated through an improved treatment of simulation results”, Second Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits EUROSOI 2006, Grenoble (Francia), Marzo de 2006

[20] Rengel R., Martín M. J., Pailloncy G., Dambrine G., y Danneville F., “On the high-frequency noise figures of merit and microscopic channel noise sources in fabricated 90 nm PD SOI MOSFETs”, 18th International Conference on Noise and Fluctuations (ICNF 2005), Salamanca (España), Septiembre de 2005

[19] Martín M. J., y Rengel R., “Statistical investigation of electronic transport in decananometer gatelength SOI MOSFETs”, 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-14), Chicago (EE.UU.), Julio de 2005

[18] Rengel R., Mateos J., González T., Pardo D., Dambrine G., Danneville F., Raskin J.-P. y Martín M. J., “Investigation of longitudinal velocity fluctuations in MOSFETs by means of ensemble Monte Carlo simulation”, 4th International Conference on Unsolved Problems on Noise (UPoN2005), Gallipoli (Italia), Junio de 2005

[17] Rengel R., Martín M. J., Pailloncy G., Dambrine G., y Danneville F., “Monte Carlo characterization of fabricated Partially-Depleted SOI MOSFETs: high-frequency performance ”, 5ª Conferencia De Dispositivos Electrónicos (CDE 2005), Tarragona (España), Febrero de 2005

[16] Rengel R., Martín M. J., Pailloncy G., Dambrine G., y Danneville F., “Numerical and experimental investigation of the RF dynamic and noise performance of sub-100 nm Partially-Depleted SOI MOSFETs”, First Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits EUROSOI 2005, Granada (España), Enero de 2005

[15] Rengel R., González T. y Martín M. J., “Monte Carlo particle-based simulation of DG MOSFETs: influence of space-quantization effects on the high-frequency noise”, SPIE’s 2nd International Symposium on Fluctuations and Noise, Gran Canaria (España), Mayo de 2004

[14] Rengel R. Pardo D. y Martín M. J., “Influence of 2D electrostatic effects on the high-frequency noise behaviour of sub-100 nm scaled MOSFETs”, SPIE’s 2nd International Symposium on Fluctuations and Noise, Gran Canaria (España), Mayo de 2004

[13] Rengel R., Pardo D. y Martín M. J., “Towards the nano-scale: influence of scaling on the electronic transport and small-signal behaviour of MOSFETs”, Trends in NanoTechnology TNT 2003, Salamanca, Septiembre de 2003

[12] Rengel R., Mateos J., Pardo D., González T., Martín M. J., Dambrine G., Danneville F. Raskin J.-P., “Microscopic analysis of the high-frequency noise behaviour of Fully-Depleted Silicon-On-Insulator MOSFETs”, 17th International Conference on Noise and Fluctuations ICNF03, Praga (República Checa), Agosto de 2003

[11] Rengel R., Pardo D. y Martín M. J., “2D Ensemble Monte Carlo modeling of bulk and FDSOI MOSFETs: active layer thickness and noise performance”, 13th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors HCIS13, Módena (Italia), Julio de 2003

[10] Rengel R., Mateos J., Pardo D., González T., Martín M. J., Dambrine G., Danneville F. y Raskin J.-P., “High-Frequency noise in FDSOI MOSFETs: a Monte Carlo investigation”, SPIE’s 1st International Symposium on Fluctuations and Noise, Santa Fe (USA), Junio de 2003

[9] Rengel R., Pardo D. y Martín M. J., “Comparative Study of the Dynamic Performance of Bulk and FDSOI MOSFET by means of a Monte Carlo Simulation”, 11th Symposium on SOI Technology and Devices, Paris (Francia), Abril de 2003

[8] Rengel R., Pardo D. y Martín M. J., “Impact of downscaling on dynamic and noise parameters of submicron MOSFETs”, 4ª Conferencia de Dispositivos Electrónicos CDE2003, Barcelona, Febrero de 2003

[7] Rengel R., Mateos J., Pardo D., González T., Martín M. J., Dambrine G., Danneville F. y Raskin J.-P., “Dynamic and Noise Behavior of Short-Gate FDSOI MOSFETs: Numerical and Experimental analysis”, 4ª Conferencia de Dispositivos Electrónicos CDE2003, Barcelona, Febrero de 2003

[6] González T., Mateos J., Martín-Martínez M.J., Pérez S., Rengel R., Vasallo B.G. y D. Pardo, “Monte Carlo Simulation of Noise in Electronic Devices: Limitations and Perspectives”, 3rd International Conference on Unsolved problems of Noise and Fluctuations in Physics, Biology and High Technology UPON2002, Washington D.C. (USA), Septiembre de 2002

[5] Rengel R., Mateos J., Pardo D., González T. and Martín M. J., “RF noise in a short channel n-MOSFET: a Monte Carlo study”, 11th International Symposium on Ultrafast Phenomena in Semiconductors, Vilnius (Lituania) Agosto de 2001

[4] Rengel R., Pardo D., Martín M. J. “Monte Carlo analysis of a 0.3-µm gate length MOSFET”, 3ª Conferencia de Dispositivos Electrónicos CDE2001, Granada, Febrero de 2001

[3] Barraud S., Dollfus P., Galdin S., Rengel R., Martin M. J. , y Velazquez J. E., “Prise en compte de la répartition discrète des impuretés par simulation Monte Carlo 3D pour l’étude des MOSFET sub-0.1μm”, 1e journée nationale “Impuretés et Défauts dans les composants ultimes” Orsay (Francia), Julio de 2000

[2] Barraud S., Dollfus P., Galdin S., Rengel R., Martin M. J. , y Velazquez J. E., “An ionised impurity scattering model for 3-D Monte Carlo device simulation with discrete impurity distribution”, 7th International Workshop on Computational Electronics Glasgow (Reino Unido), Mayo de 2000

[1] Rengel R., Velázquez J.E., Martín M. J., “Microscopic Analysis of the influence of High doping and Strain on electron transport in SiGe/Si and Si/SiGe”, 2ª Conferencia de Dispositivos Electrónicos CDE1999, Madrid, Junio de 1999

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