Raúl Rengel Estévez
Área de Electrónica. Departamento de Física Aplicada
Foto chips


Over the last 20 years, my main research activity has been devoted to the Monte Carlo modeling of electron transport in silicon devices, including the investigation of electronic noise processes and small-signal behavior in the high-frequency range in MOSFET transistors and alternative architectures (SOI substrates, Schottky barrier MOSFETs, etc.).

At the present moment my main focus is related to the Monte Carlo modelling of Graphene (at the material and device level), together with other prospective alternative 2D materials

ResearcherID: G-4425-2015



ORCID: 0000-0003-4976-2244





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