Raúl Rengel Estévez
Área de Electrónica. Departamento de Física Aplicada
 
Foto chips

Conferences

[68] Pascual E., Iglesias J. M., Martín M. J., Rengel R., and Kalna, K., “Monte Carlo Simulations for 2D Materials: Parallelization Strategy and Degeneracy in MoS2″, ImagineNano 2020, Bilbao, Spain, September 2020.

[67] Pascual E., Iglesias J. M., Martín M. J., Rengel R., and Kalna, K., “Exploration of a 2D Material Monte Carlo Simulator: Parallelization Strategy and Noise Characterization of MoS2″, Graphene and 2DM Online conference (GO2020), July 2020.

[66] Iglesias J. M., Martín M. J., Pascual E., Hamham E. M., and Rengel R., “Collinear scattering in the relaxation dynamics of photoexcited graphene”, 21st International Conference on Electron Dynamics in Semiconductors, EDISON 2019, Nara, Japan, July 2019.

[65] Pascual E., Iglesias J. M., Hamham E. M., Martín M. J. and Rengel R., “Microscopic analysis of electronic transport in MoS2″, 21st International Conference on Electron Dynamics in Semiconductors, EDISON 2019, Nara, Japan, July 2019.

[64] Iglesias J. M., Pascual E., Hamham E. M., Martín M. J. and Rengel R., “Impact ionization and Auger recombination in graphene under stationary electric fields”, Graphene Conference 2019, Rome, Italy, June 2019.

[63] Pascual E., Iglesias J. M., Hamham E. M., Martín M. J. and Rengel R., “Diffusive electronic transport in MoS2: a Monte Carlo study”, 12th Spanish Conference on Electron Devices (CDE2018), Salamanca, Spain, November 2018.

[62] Iglesias J. M., Pascual E., Hamham E. M., Martín M. J. and Rengel R., “The Role of interband processes on electronic transport in monolayer graphene”, 12th Spanish Conference on Electron Devices (CDE2018), Salamanca, Spain, November 2018.

[61] Feijoo P. C., Iglesias J. M., Hamham E. M., Rengel R. and Jiménez D., “Impact of impurities, defects and residual carrier concentration on high frequency performance of hBN-encapsulated graphene field-effect transistors”, 12th Spanish Conference on Electron Devices (CDE2018), Salamanca, Spain, November 2018.

[60] Feijoo P. C., Pasadas F., Iglesias J. M., Martín M. J., Rengel R., Jiménez D., “Investigation of high frequency performance of hBN encapsulated Graphene Field-Effect Transistors”, ImagineNano 2018, Bilbao, Spain, March 2018.

[59] Hamham E.M., Iglesias J. M., Martín M. J., Rengel R., “A Monte Carlo study of electronic transport in silicene: importance of out-of-equilibrium phonons”, ImagineNano 2018, Bilbao, Spain, March 2018.

[58] Iglesias J. M., Hamham E.M., Martín M. J., Pascual E., Rengel R., “Monte Carlo simulation of harmonic generation in graphene under AC applied fields”, Graphene Week 2017, Athens, Greece, September 2017.

[57] Iglesias J. M., Hamham E.M., Martín M. J., Pascual E., Jiménez D., Feijoo P. C., Pasadas F., Rengel R., “Graphene encapsulated on h-BN: an analysis of mobility and saturation velocity for GFET operation, 20th International Conference on Electron Dynamics in Semiconductors, EDISON 2017, Buffalo, USA, July 2017.

[56] Zurrón O., Iglesias J. M., Rengel R., Martín M. J. and Plaja L., “High order harmonic generation in graphene”, CLEO Europe 2017 Conference on Lasers and Electro-Optics, Munich, Germany, June 2017

[55] Zurrón O., Iglesias J. M., Rengel R., Martín M. J. and Plaja L., “Non perturbative high harmonic generation in graphene”, X Spanish Optoelectronics Meeting (OPTOEL 2017), Santiago de Compostela, Spain, June 2017

[54] Feijoo P. C., Pasadas F., Iglesias J. M., Martín M. J., Rengel R., Jiménez D., “Impact of scattering mechanisms and dimensions scaling in Graphene Field-Effect transistors ”, 11th Spanish Conference on Electron Devices (CDE2017), Barcelona, Spain, February 2017.

[53] Rengel R., Iglesias J. M., Pascual E. and Martín M. J., “A combined Monte Carlo-balance equations approach for the study of small-signal and noise properties of graphene”, 11th Spanish Conference on Electron Devices (CDE2017), Barcelona, Spain, February 2017.

[52] Iglesias J. M., Martín M. J., Pascual E. and Rengel R., “Impact of Self-heating and Hot Phonons on the Drift Velocity in Graphene”, 11th Spanish Conference on Electron Devices (CDE2017), Barcelona, Spain, February 2017.

[51] Zurrón O., Iglesias J. M., Rengel R., Martín M. J., and Plaja L. “High harmonic generation in graphene: Temporal and spectral properties”, Ultrafast Phenomena and Nanophotonics XXI (SPIE OPTO 2017), San Francisco, USA, January 2017.

[50] Iglesias J. M., Martín M. J., Pascual E. and Rengel R., “Substrate-dependent Out-of-equilibrium Phonon and Electron Dynamics in Photoexcited Graphene”, 7th International Conference on Advanced Nanomaterials (ANM2016), Aveiro, Portugal, July 2016.

[49] Iglesias J. M., Rengel R., Pascual E. and Martín M. J., “Monte Carlo study of velocity fluctuations during transient regimes in graphene”, 7th International Conference on Unsolved Problems on Noise (UPON2015), Barcelona, Spain, July 2015.

[48] Iglesias J. M., Martín M. J., Pascual E. and Rengel R., “A Monte Carlo study on the hot carrier relaxation dynamics in photoexcited graphene”, 19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON19), Salamanca, Spain, June 2015.

[47] Rengel R., Iglesias J. M., Pascual E. and Martín M. J., “Effect of charged impurity scattering on the electron diffusivity and mobility in graphene”, 19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON19), Salamanca, Spain, June 2015.

[46] Iglesias J. M., Martín M. J., and Rengel R., “High electric field transport in graphene: impact of screened coulomb interactions”, Graphene Conference 2015, Bilbao, Spain, March 2015.

[45] Rengel R., Iglesias J. M., Pascual E. and Martín M. J., “Monte Carlo modelling of mobility and microscopic transport in supported graphene”, 10th Spanish Conference on Electron Devices (CDE 2015), Aranjuez, Spain, February 2015.

[44] Iglesias J. M., Martín M. J., Pascual E. and Rengel R., “Influence of systematic gate alignment variations on static characteristics in DG-SB-MOSFETs”, 10th Spanish Conference on Electron Devices (CDE 2015), Aranjuez, Spain, February 2015.

[43] Rengel R., Pascual E. and Martín M. J., “Impact of the temperature and remote phonon scattering on charge transport in supported graphene”, 15th Trends in Nanotechnology International Conference (TNT 14), Barcelona, Spain, October 2014.

[42] Rengel R. and Martín M. J., “Influence of the Dispersion Relationship on Electronic Transport in Suspended Graphene”, 18th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON 18), Matsue, Japan, July 2013.

[41] Martin M. J.,  Rengel R., de Souza M. and Pavanello M. A., “Impact of the Gate Length on the Transport Properties of Graded-Channel SOI n-MOSFETs”, 18th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures  (EDISON 18), Matsue, Japan, July 2013.

[40] Martín M. J., Couso C. and Rengel R., “Velocity and momentum fluctuations in Suspended Monolayer Graphene” 22th International Conference on Noise and Fluctuations (ICNF 2013), Montpellier, France, June 2013.

[39] Rengel R., Couso C. and Martín M. J., “A Monte Carlo Study of Electron Transport in Suspended Monolayer Graphene”, 9th Spanish Conference on Electron Devices (CDE 2013), Valladolid, Spain, February 2013

[38] García J. S., Martín M. J. and Rengel R., “Space quantization effects in Double Gate SB-MOSFETs: role of the active layer thickness”, 9th Spanish Conference on Electron Devices (CDE 2013), Valladolid, Spain, February 2013

[37] Couso C., Rengel R. y Martín M. J., “Schottky Barrier MOSFETs working in the linear regime: A Monte Carlo study of microscopic transport”, 9th Spanish Conference on Electron Devices (CDE 2013), Valladolid, España, Febrero 2013

[36] Couso C., Pascual E., Galeote J. M, Martín M. J. and Rengel R. “Effect of the dopant segregation layer on the static characteristics of Schottky-Barrier n-MOSFETs” 8th International Caribbean Conferencia on Devices, Circuits and Systems (ICCDCS  2012), Playa del Carmen, Mexico, March 2012

[35] Galeote J. M., Pascual E., Rengel R. and Martín M. J. “A Monte Carlo study of the influence of scaling in SB-MOSFETs: static and dynamic characteristics”, 8th European Workshop on Silicon on Insulator Technology, Devices and Circuits (EUROSOI 2012), Montpellier, France, January 2012

[34] Pascual E., Rengel R., and Martín M. J., “Influence of the underlap length on the RF noise performance of a Schottky Barrier MOSFET”, 21st International Conference on Noise and Fluctuations (ICNF 2011), Toronto (Canada), June 2011

[33] Galeote J. M., Rengel R., Pascual E., and Martín M. J., “A Monte Carlo model for the study of n-type strained Silicon Schottky devices”, 8th Spanish Conference on Electronic Devices (CDE 2011), Palma de Mallorca (Spain), February 2011

[32] Martín M. J., Rengel R., Galeote J. M., de Souza M. and Pavanello M. A., “Monte Carlo simulation of graded-channel fully depleted SOI nMOSFETs”, 8th Spanish Conference on Electronic Devices (CDE 2011), Palma de Mallorca (Spain), February 2011

[31] Dubois E., Larrieu G., Breil N., Valentin R., Danneville F., Yarekha D. A., Reckinger N., Tang X., Halimaoui A., Rengel R., Pascual E., Pouydebasque A., Wallart X., Godey S., Ratajczak J., Laszcz A., Katcki J., Raskin J.-P., Dambrine G., Cros A. and Skotnicki T., “Metallic source/drain for advanced MOS architectures: from material engineering to device integration”, SINANO-NANOSIL Workshop, Silicon-based CMOS and Beyond-CMOS Nanodevices, Athens (Greece), September 2009

[30] Dubois E., Larrieu G., Breil N., Valentin R., Danneville F., Yarekha D. A., Reckinger N., Tang X., Halimaoui A., Rengel R., Pascual E., Pouydebasque A., Wallart X., Godey S., Ratajczak J., Laszcz A., Katcki J., Raskin J.-P., Dambrine G., Cros A. and Skotnicki T., “Metallic source/drain architecture for advanced MOS technology: an overview of METAMOS results”, 8th Symposium Diagnostics & Yield Advanced Silicon Devices and Technologies for ULSI Era, Warsaw (Poland), June 2009

[29] Rengel R., Martín M. J. and Danneville F., “Comparative study of Laterally Asymmetric Channel and conventional MOSFETs”, 7th Spanish Conference on Electronic Devices (CDE 2009), Santiago de Compostela (Spain), February 2009

[28] Pascual E., Rengel R. and Martín M. J., “Current drive in n- type Schottky Barrier MOSFETs: a Monte Carlo study”, 7th Spanish Conference on Electronic Devices (CDE 2009), Santiago de Compostela (Spain), February 2009

[27] Martín M. J., Pascual E., González T. and Rengel R, “Ballistic transport and RF Noise in ultra-scaled SOI MOSFETs: a Monte Carlo study”, Fourth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (EUROSOI 2008), Cork (Ireland), January 2008

[26] Martín M. J., Rengel R, Pascual E. and González T., “RF Noise and Scaling in Nanometer SOI MOSFETs: Influence of Quasiballistic Transport”, 19th International Conference on Noise and Fluctuations (ICNF 2007), Tokyo (Japan), September 2007

[25] Pascual E., Rengel R., Reckinger N., Tang X., Bayot V., Dubois E. and Martín M. J., “Monte Carlo analysis of carrier transport in fabricated back-to-back Schottky diodes: influence of direct quantum tunnelling and temperature”, 15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-15), Tokyo (Japan), July 2007

[24] Martín M. J., Rengel R, Pascual E., Lusakowski J., Knap W. and González T., “Onset of quasi-ballistic transport and mobility degradation in ultra scaled MOSFETs: a Monte Carlo study”, 15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-15), Tokyo (Japan), July 2007

[23] Pascual E., Rengel R. and Martín M. J., “Monte Carlo analysis of quantum tunneling and thermionic transport in a reverse biased Schottky diode”, 6th Spanish Conference on Electronic Devices (CDE 2007), El Escorial (Spain), February 2007

[22] Martín M. J., Rengel R., Pascual E. and González T., “Monte Carlo analysis of carrier transport from diffusive to ballistic regime in nanometer SOI MOSFETs ”, 6th Spanish Conference on Electronic Devices (CDE 2007), El Escorial (Spain), February 2007

[21] Martín M. J., and Rengel R., “A Monte Carlo study of downscaled FD SOI MOSFETs: mean free paths and transit times evaluated through an improved treatment of simulation results”, Second Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits EUROSOI 2006, Grenoble (France), March 2006

[20] Rengel R., Martín M. J., Pailloncy G., Dambrine G., and Danneville F., “On the high-frequency noise figures of merit and microscopic channel noise sources in fabricated 90 nm PD SOI MOSFETs”, 18th International Conference on Noise and Fluctuations (ICNF 2005), Salamanca (Spain), September 2005

[19] Martín M. J., and Rengel R., “Statistical investigation of electronic transport in decananometer gatelength SOI MOSFETs”, 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-14), Chicago (USA), July 2005

[18] Rengel R., Mateos J., González T., Pardo D., Dambrine G., Danneville F., Raskin J.-P. and Martín M. J., “Investigation of longitudinal velocity fluctuations in MOSFETs by means of ensemble Monte Carlo simulation”, 4th International Conference on Unsolved Problems on Noise (UPoN2005), Gallipoli (Italy), June 2005

[17] Rengel R., Martín M. J., Pailloncy G., Dambrine G., and Danneville F., “Monte Carlo characterization of fabricated Partially-Depleted SOI MOSFETs: high-frequency performance ”, 5th Spanish Conferencia on Electronic Devices (CDE 2005), Tarragona (Spain), February 2005

[16] Rengel R., Martín M. J., Pailloncy G., Dambrine G., and Danneville F., “Numerical and experimental investigation of the RF dynamic and noise performance of sub-100 nm Partially-Depleted SOI MOSFETs”, First Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits EUROSOI 2005, Granada (Spain), January 2005

[15] Rengel R., González T. and Martín M. J., “Monte Carlo particle-based simulation of DG MOSFETs: influence of space-quantization effects on the high-frequency noise”, SPIE’s 2nd International Symposium on Fluctuations and Noise, Gran Canaria (Spain), May 2004

[14] Rengel R. Pardo D. and Martín M. J., “Influence of 2D electrostatic effects on the high-frequency noise behaviour of sub-100 nm scaled MOSFETs”, SPIE’s 2nd International Symposium on Fluctuations and Noise, Gran Canaria (Spain), May 2004

[13] Rengel R., Pardo D. and Martín M. J., “Towards the nano-scale: influence of scaling on the electronic transport and small-signal behaviour of MOSFETs”, Trends in NanoTechnology TNT 2003, Salamanca (Spain), September 2003

[12] Rengel R., Mateos J., Pardo D., González T., Martín M. J., Dambrine G., Danneville and F. Raskin J.-P., “Microscopic analysis of the high-frequency noise behaviour of Fully-Depleted Silicon-On-Insulator MOSFETs”, 17th International Conference on Noise and Fluctuations ICNF03, Praga (Czech Republic), August 2003

[11] Rengel R., Pardo D. and Martín M. J., “2D Ensemble Monte Carlo modeling of bulk and FDSOI MOSFETs: active layer thickness and noise performance”, 13th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors HCIS13, Modena (Italy), July 2003

[10] Rengel R., Mateos J., Pardo D., González T., Martín M. J., Dambrine G., Danneville F. and Raskin J.-P., “High-Frequency noise in FDSOI MOSFETs: a Monte Carlo investigation”, SPIE’s 1st International Symposium on Fluctuations and Noise, Santa Fe (USA), June 2003

[9] Rengel R., Pardo D. and Martín M. J., “Comparative Study of the Dynamic Performance of Bulk and FDSOI MOSFET by means of a Monte Carlo Simulation”, 11th Symposium on SOI Technology and Devices, Paris (France), April 2003

[8] Rengel R., Pardo D. and Martín M. J., “Impact of downscaling on dynamic and noise parameters of submicron MOSFETs”, 4th Spanish Conference on Electronic Devices (CDE 2003), Barcelona (Spain), February 2003

[7] Rengel R., Mateos J., Pardo D., González T., Martín M. J., Dambrine G., Danneville F. and Raskin J.-P., “Dynamic and Noise Behavior of Short-Gate FDSOI MOSFETs: Numerical and Experimental analysis”, 4th Spanish Conference on Electronic Devices (CDE 2003), Barcelona (Spain), February 2003

[6] González T., Mateos J., Martín-Martínez M.J., Pérez S., Rengel R., Vasallo B.G. and Pardo D., “Monte Carlo Simulation of Noise in Electronic Devices: Limitations and Perspectives”, 3rd International Conference on Unsolved problems of Noise and Fluctuations in Physics, Biology and High Technology UPON2002, Washington D.C. (USA), September 2002

[5] Rengel R., Mateos J., Pardo D., González T. and Martín M. J., “RF noise in a short channel n-MOSFET: a Monte Carlo study”, 11th International Symposium on Ultrafast Phenomena in Semiconductors, Vilnius (Lithuania) August 2001

[4] Rengel R., Pardo D. and Martín M. J. “Monte Carlo analysis of a 0.3-µm gate length MOSFET”, 3rd Spanish Conference on Electronic Devices (CDE 2001), Granada (Spain), February 2001

[3] Barraud S., Dollfus P., Galdin S., Rengel R., Martin M. J. , and Velazquez J. E., “Prise en compte de la répartition discrète des impuretés par simulation Monte Carlo 3D pour l’étude des MOSFET sub-0.1μm”, 1e journée nationale “Impuretés et Défauts dans les composants ultimes” Orsay (France), July 2000

[2] Barraud S., Dollfus P., Galdin S., Rengel R., Martin M. J. , and Velazquez J. E., “An ionised impurity scattering model for 3-D Monte Carlo device simulation with discrete impurity distribution”, 7th International Workshop on Computational Electronics Glasgow (United Kingdom), May 2000

[1] Rengel R., Velázquez J.E., and Martín M. J., “Microscopic Analysis of the influence of High doping and Strain on electron transport in SiGe/Si and Si/SiGe”, 2nd Spanish Conference on Electronic Devices (CDE 1999), Madrid (Spain), June 1999

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