(ISI Web of Science, link últimos 20 años)
[56] Iglesias J. M., Nardone A., Rengel R., Kalna K., Martín M. J., and Pascual E., “Carrier mobility and high-field velocity in 2D transition metal dichalcogenides: Degeneracy and screening”, accepted for publication in 2D Materials (2023)
[55] Pascual E., Iglesias J. M., Martín M. J., and Rengel R., “Harmonic extraction in graphene: Monte Carlo analysis of the substrate influence”, Materials, 14, 5108 (2021)
[54] Iglesias J. M., Pascual E., Martín M. J., and Rengel R., “High order harmonic generation in 2D transition metal disulphides”, Applied Physics Letters, 119, 012101 (2021)
[53] Iglesias J. M., Pascual E., Martín M. J., and Rengel R., “Relevance of collinear processes to the ultrafast dynamics of photoexcited carriers in graphene”, Physica E: Low-dimensional Systems and Nanostructures, 123, 114211 (2020)
[52] Rengel R., Castelló O., Pascual E., Martín M. J., and Iglesias J. M., “Monte Carlo study of noise velocity fluctuations and microscopic carrier transport in monolayer transition metal dichalcogenides”, Journal of Physics D: Applied Physics, 53, 395102 (2020)
[51] Pascual E., Iglesias J. M., Martín M. J., and Rengel R., “Electronic transport and noise characterization in MoS2″, Semiconductor Science and Technology, 35, 055021 (2020)
[50] González T., Martín M. J. and Mateos J., “Special Issue on Terahertz Devices”, Semiconductor Science and Technology, 35, 4 (2020)
[49] Iglesias J. M., Pascual E., Hamham E. M., Martín M. J., and Rengel R., “Interband scattering-induced ambipolar transport in graphene”, Semiconductor Science and Technology, 34, 065011 (2019)
[48] Feijoo P. C., Pasadas F., Iglesias J. M., Hamham E. M., Rengel R., and Jiménez D., ”Radio Frequency Performance Projection and Stability Trade-off of h-BN Encapsulated Graphene Field-Effect Transistors”, IEEE Transactions on Electron Devices, 66, 1567-1573 (2019)
[47] Iglesias J. M., Hamham E. M., Pascual E., and Rengel R., ”Monte Carlo investigation of noise and high-order harmonic extraction in graphene”, Semiconductor Science and Technology, 33, 124012 (2018)
[46] Hamham E. M., Iglesias J. M., Pascual E., Martín M. J., and Rengel R., ”Impact of the hot phonon effect on electronic transport in monolayer silicene”, Journal of Physics D: Applied Physics,51, 415102 (2018)
[45] Rengel R., Iglesias J. M., Hamham E. M., and Martín M. J., ”Damping of acoustic flexural phonons in silicene: influence on high-field electronic transport”, Semiconductor Science and Technology, 33, 065011 (2018)
[44] Feijoo P. C., Pasadas, F. Iglesias, J. M., Martín M. J., Rengel R., Li C., Kim W., Riikonen J., Lipsanen H. and Jiménez D., ”Scaling of graphene field-effect transistors supported on hexagonal boron nitride: radio-frequency stability as a limiting factor”, Nanotechnology, 28, 485203 (2017)
[43] Iglesias J. M., Rengel R., Hamham E. M., Pascual E. and Martín M. J., ”Interplay of out-of-equilibrium phonons and self-heating under high field transport conditions in graphene”, Journal of Physics D: Applied Physics , 50, 305101 (2017)
Enlace a la publicación
[42] Iglesias J. M., Martín M. J., Pascual E. and Rengel R., ”Substrate influence on the early relaxation stages of photoexcited carriers in monolayer graphene”, Applied Surface Science , 424, 52-57 (2017)
Enlace a la publicación
[41] Rengel R., Iglesias J. M., Pascual E. and Martín M. J., ”A balance equations approach for the study of the dynamic response and electronic noise in graphene”, Journal of Applied Physics 121, 185705 (2017)
Enlace a la Publicación
[40] Rengel R., Iglesias J. M., Pascual E., and Martín M. J.,”Noise temperature in graphene at high frequencies”, Semiconductor Science and Technology 31, 075001 (2016)
Enlace a la publicación
[39] Iglesias J. M., Martín M. J., Pascual E. and Rengel R.,”Spectral density of velocity fluctuations under switching field conditions in graphene”, Journal of Statistical Mechanics: Theory and Experiment 2016, 054018 (2016)
[38] Iglesias J. M., Martín M. J., Pascual E. and Rengel R.,”Hot carrier and hot phonon coupling during ultrafast relaxation of photoexcited electrons in graphene ”, Applied Physics Letters 108, 043105 (2016)
[37] Rengel R., Pascual E. and Martín M. J.,”Influence of the substrate on the diffusion coefficient and the momentum relaxation in graphene: The role of surface polar phonons”, Applied Physics Letters 104, 233107 (2014)
[36] Martín M. J., Couso, C., Pascual E. y Rengel R., ”Monte Carlo Study of Dopant-Segregated Schottky Barrier SoI MOSFETs: Enhancement of the RF Performance”, IEEE Trans. Electron Dev. 99, 3955 (2014)
[35] Rengel R. and Martín M. J., “Título: Harmonic distortion in laterally asymmetric channel metal-oxide-semiconductor field-effect transistors operating in the linear regime”, International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 27, 192 (2014)
[34] Rengel R. , Pascual E. and Martín M. J., “Influence of the substrate on the diffusion coefficient and the momentum relaxation in graphene: The role of surface polar phonons”, Applied Physics Letters 104(23), pp:233107 (2014).
[33] Rengel R. and Martín M. J., ”Diffusion coefficient, correlation function and power spectral density of velocity fluctuations in monolayer graphene”. Journal of Applied Physics 114, pp:143702 (2013)
[32] Martín M. J., Pascual E. y Rengel R.,”RF dynamic and noise performance of Metallic Source/Drain SOI n-MOSFETs”, Solid-State Electronics 73, pp: 64–73 (2012)
[31] Rengel R., Martín M. J. y Danneville F., “Microscopic modelling of RF noise in Laterally Asymmetric Channel MOSFETs”, IEEE Electron Device Letters 32 72 (2011)
Publicaciones (ISI Web of Science, anteriores)
[30] Rengel R. y Martín M. J., “Electronic transport in Laterally Asymmetric Channel MOSFET for RF analog applications”, IEEE Transactions on Electron Devices 57 2448 (2010)
[29] Pascual E., Martín M. J., Rengel R., Larrieu G y Dubois E., “Enhanced carrier injection in Schottky contacts using dopant segregation: a Monte Carlo research”, Semiconductor Science and Technology 24 025022 (2009)
[28] Pascual E., Rengel R. y Martín M. J., “Microscopic modelling of reverse biased Schottky diodes: influence of non-equilibrium transport phenomena”, Semiconductor Science and Technology 22 1003 (2007)
[27] Lusakowski J., Martín Martínez M. J., Rengel R., González T., Tauk R., Meziani Y. M., Knap W., Boeuf F. y Skotnicki T., “Quasiballistic transport in nanometer Si metal-oxide-semiconductor field-effect transistors: Experimental and Monte Carlo analysis”, Journal of Applied Physics 101 114511 (2007)
[26] Rengel R., Pascual E. y Martín M. J., “Injected current and quantum transmission coefficient in low Schottky barriers: WKB and Airy approaches ”, IEEE Electron Device Letters 28 171 (2007)
[25] Rengel R., Martín M. J., Dambrine G. y Danneville F., “A Monte Carlo investigation of the RF performance of Partially-Depleted SOI MOSFETs”, Semiconductor Science and Technology 21 273 (2006)
[24] Rengel R., Martín M. J., González T., Mateos J., Pardo D., Dambrine G., Raskin J.-P. y Danneville F., “A microscopic interpretation of the RF noise performance of fabricated FDSOI MOSFETs”, IEEE Transactions on Electron Devices 53 523 (2006)
[23] Rengel R., González T.. y Martín M. J., “On the influence of space quantization effects on the RF noise behaviour of DG MOSFETs”, Fluctuation and Noise Letters 4 561(2004)
[22] Rengel R., Pardo D. y Martín M. J., “Towards the nanoscale: Influence of scaling on the electronic trasport and small signal behaviour of MOSFETs”, Nanotechnology 15 S276 (2004)
[21] Rengel R., Pardo D., y Martín M. J., “A physically-based nvestigation of the small-signal behaviour of bulk and FD SOI MOSFETs for microwave application”, Semiconductor Science and Technology 19 634 (2004)
[20] Rengel R., Pardo D. y Martín M. J., “2D Ensemble Monte Carlo modeling of bulk and FDSOI MOSFETs: active layer thickness and noise performance”, Semiconductor Science and Technology 19, S199 (2004)
[19] Rengel R., Mateos J., Pardo D., González T., Martín M. J., Dambrine G., Danneville F. y Raskin J.-P., “Numerical and experimental study of a 0.25 µm fully-depleted silicon-on-insulator MOSFET: static and dynamic radio-frequency behaviour”, Semiconductor Science and Technology 17 1149 (2002)
[18] Rengel R., Mateos J., Pardo D., González T. y Martín M. J., “RF noise in a short-channel n-MOSFET: a Monte Carlo study”, Materials Science Forum 384-385 155 (2002)
[17] M. J. Martín, S. Pérez, D. Pardo y T. González “Influence of Ge profiles on the noise behavior of SiGe HBTs under high injection conditions”, Physica B 314, 384- 385 (2002)
[16] R. Rengel, J. Mateos, D. Pardo, T. González y M. J. Martín “Monte Carlo analysis of dynamic and noise performance of submicron MOSFETs at RF and microwave frequencies “, Semicond. Sci. Technology 160 , 939- 946 (2001)
[15] S. Barraud, P. Dollfus, S. Galdin, R. Rengel, M. J. Martín y J.E. Velázquez “An ionised-impurity scattering model for 3-D Monte Carlo device simulation with discrete impurity distribution”. VLSI Design 13, 399-404 (2001)
[14] M. J. Martín, S. Pérez, D. Pardo y T. González, “High Injection Effects on Noise Characteristics of Si BJT’s and SiGe HBT’s”, Microelectronic Reliability 41, 847-854 (2001)
[13] M. J. Martín, S. Pérez, D. Pardo y T. González “Monte Carlo analysis of the noise behavior in Si BJT’s and SiGe HBT’s at RF frequencies “, J. Appl. Phys 90, 1582-1588 (2001)
[12] M. J. Martín, D. Pardo y J. E. Velázquez, “Microscopic analysis of the influence of uniform and graded Ge profiles on the current-noise operation mode of n-Si/p-Si1-xGex heterostructures” Semicond. Sci. Technology 15, 277- 285 (2000)
[11] M. J. Martín, D. Pardo y J. E. Velázquez, “Microscopic analysis of voltage noise operation-mode in SiGe/Si Bipolar Heterojunctions: Influence of the SiGe strained layer” J. Appl. Phys 88, 1511- 1514 (2000)
[10] M. J. Martín, D. Pardo y J. E. Velázquez “ 2D bipolar Monte Carlo calculation of curent flucutations at the onset of quasisaturation of an Si BJT” Physica B: Physics of Condensed Matter 272, 363- 366(1999).
[9] M. J. Martín, D. Pardo y J. E. Velázquez “Microscopic Analysis Of The Influence Of Strain And Bandgap Offsets On Noise Performance In Si1-x Gex / Si Heterojunctions” J. Appl. Phys. 84, 5012- 5020 (1998)
[8] P. Golinelli, R. Brunetti, L. Varani, L. Reggiani, E. Starikov, P. Shiktorov, V. Gruzinskis T. González, M. J. Martín y D. Pardo. “Calculation Of Hot-Carrier Thermal Conductivity From The Simulation Of Submicron Semiconductor Structures”, Semicond. Sci. Technology. 12, 1511- 1513 (1997)
[7] M. J. Martín, D. Pardo y J. E. Velázquez “Analysis Of Voltage Noise In Forward-Biased Silicon Bipolar Homojunctions: Low And High Injection Regimes” Appl. Phys. Lett. 71, 3382- 3384 (1997)
[6] M. J. Martín, D. Pardo y J. E. Velázquez “Study Of Current Mode Noise In Si/Si1-XGex Strained Heterojuntions”, Phys. Status Solidi (B) 204, 462- 465(1997)
[5] M. J. Martín, T. González, D. Pardo y J. E. Velázquez “Monte Carlo Analysis Of A Schottky Diode With An Automatic Space-Variable Charge Algorithm” Semicond. Sci. Technology 11, 380- 387 (1996)
[4] E. Starikov, P. Shiktorov, V. Gruzinskis, T. González, M. J. Martín, D. Pardo, L. Reggiani y L. Varani “Hydrodynamic And Monte Carlo Simulation Of Steady-State Transport And Noise In Submicrometer n+nn+ Silicon Structures “, Semicond. Sci. Technology 11 , 865- 872 (1996)
[3] M. J. Martín, D. Pardo y J. E. Velázquez “Analysis Of Current Fluctuations In Silicon pn+ and p+n Homjunctions”, J. Appl. Phys. 79, 6975- 6981 (1996)
[2] M. J. Martín, T. González, D. Pardo y J. E. Velázquez “One-Dimensional Monte Carlo Analysis Of Electron Transport In Submicron Silicon Structures” Semicond. Sci. Technology 9, 1316- 1323 (1994)
[1] M. J. Martín, T. González, J. E. Velázquez y D. Pardo “Simulation Of Electron Transport In Silicon: Impact-Ionization Processes” Semicond. Sci. Technology 8, 1291-1297 (1993)
