Sistema de blogs Diarium
Universidad de Salamanca
Ignacio Íñiguez de la Torre Mulas
Sciences Faculty, Dept. of Applied Physics, Electronics Group
 
Diapositiva 5

Proceedings de Congresos

1. Autores: I. Íñiguez-de-la-Torre, J. Mateos, T. Gonzalez, D. Pardo, S. Bollaert, Y. Roelens and A. Cappy
Título: Surface charge effects in Ballistic T-Branch Nanojunctions
Publicación: 2007 Spanish Conference on Electron Devices, IEEE Catalog Number 07EX1644, 2007, pp. 48-51, ISBN: 1-4244-0868-7

2. Autores: J. Mateos, S. Pérez, I. Íñiguez-de-la-Torre, D. Pardo, T. Gonzalez
Título: Monte Carlo simulation of AlGaN/GaN heterostructures
Publicación: 2007 Spanish Conference on Electron Devices, IEEE Catalog Number 07EX1644, 2007, pp. 84-87, ISBN: 1-4244-0868-7

3. Autores: I. Íñiguez-de-la-Torre, J. Mateos, D. Pardo, T. González
Título: Microscopic analysis of noise in self-switching diodes
Publicación: Noise and Fluctuations, 19th International Conference on Noise and Fluctuations, ICNF 2007, AIP Conference Proceedings, Volume 922, 2007, pp. 317-320, ISBN 978-0-7354-0432-8

4. Autores: J. Mateos, S. Pérez, I. Íñiguez-de-la-Torre, D. Pardo, T. González
Título: Monte Carlo simulation of GaN HEMT degradation mechanisms
Publicación: WOCSDICE 2007, The 31st Workshop on Compound Semiconductor Devices and Integrated Circuits, abstract book, 2007, pp. 233-236, ISBN 978-88-6129-088-4

5. Autores: I. Íñiguez-de-la-Torre, H. Rodilla, J. Mateos, D. Pardo, A. M. Song and T. González
Título: Noise enhanced THz rectification tuned by geometry in planar asymmetric nanodiodes
Publicación: Noise and Fluctuations, 20th International Conference on Noise and Fluctuations, ICNF 2009, AIP Conference Proceedings, Volume 1129, 2009, pp. 229-232, ISBN 978-0-7354-0665-0

6. Autores: I. Íñiguez-de-la-Torre, J. Mateos, D. Pardo, A. M. Song and T. González
Título: Tunable Terahertz Resonance in Planar Asymmetric Nanodiodes
Publicación: 2009 Spanish Conference on Electron Devices, IEEE Catalog Number: CFP09589, 2009, pp. 463-466, ISBN 978-1-4244-2839-7

7. Autores: I. Íñiguez-de-la-Torre, T. González, D. Pardo, C. Gardes, Y. Roelens, S. Bollaert and J. Mateos
Título: Frequency response of T-shaped Three Branch Junctions as Mixers and Detectors
Publicación: 2009 Spanish Conference on Electron Devices, IEEE Catalog Number: CFP09589, 2009, pp. 168-171, ISBN 978-1-4244-2839-7

8. Autores: T. González, I. Íñiguez-de-la-Torre, D. Pardo, A. M. Song and J. Mateos
Título: THz generation based on Gunn oscillations in GaN planar asymmetric nanodiodes
Publicación: Proceedings of the International Conference on Indium Phosphide and Related Materials (IPRM 2010), DOI: 10.1109/ICIPRM.2010.5516357, 2010, ISBN 978-1-4244-5919-3

9. Autores: I. Íñiguez-de-la-Torre, V. Kaushal, M. Margala, T. González and J. Mateos
Título: Sub-Thz frequency analysis in nano-scale devices at room temperature
Publicación: Proceedings of the Device Research Conference 2010 (DRC 2010), DOI: 10.1109/DRC.2010.5551864, 2010, ISBN 978-1-4244-6562-0

10. Autores: V. Kaushal, I. Íñiguez-de-la-Torre and M. Margala
Título: Room temperature Nonlinear Ballistic Nanodevices for Logic Applications
Publicación: Proceedings of the Device Research Conference 2010 (DRC 2010), DOI: 10.1109/DRC.2010.5551867, 2010, ISBN 978-1-4244-6562-0

11. Autores: S. Purohit, I. Íñiguez-de-la-Torre, V. Kaushal and M. Margala
Título: High Performance Digital Circuit Design using Ballistic Nano-electronics
Publicación: 53rd IEEE International Midwest Symposium on Circuits and Systems (MWSCAS 2010), DOI: 10.1109/MWSCAS.2010.5548784

12. Autores: V. Kaushal, I. Íñiguez-de-la-Torre and M. Margala
Título: Topology impact on the room temperature performance of THz-range Ballistic Deflection Transistors
Publicación: 20th Great Lakes Symposium on VLSI (GLSVLSI 2010),
DOI: 10.1145/1785481.1785520

13. Autores: A. Íñiguez-de-la-Torre, J. Mateos, I. Íñiguez-de-la-Torre, and T. González
Título: Toward THz Gunn Oscillations in Planar GaN Nanodiodes
Publicación: 2011 Spanish Conference on Electron Devices, IEEE Catalog, 2011, #53.
ISBN: 978-1-4244-7865-1

14. Autores: C. Gaquiere, G. Ducournau, P. Sangaré, B. Grimbert, M. Faucher, I. Íñiguez-de-la-Torre, A. Íñiguez-de-la-Torre, T. González and J. Mateos
Título: Wide Band Gap Self-Switching Nanodevices for THz Applications at Room Temperature
Publicación: Proceedings of the 6th European Microwave Integrated Circuits Conference 2011, 2011, pp. 589-591, ISBN: 978-1-61284-236-3

15. Autores: J. Mateos, I. Íñiguez-de-la-Torre and T. González
Título: Noise and Terahertz rectification in semiconductor diodes and transistors
Publicación: Noise and Fluctuations, 21th International Conference on Noise and Fluctuations (ICNF 2011), pp. 16-21

16. Autores: D. Wolpert, I. Íñiguez-de-la-Torre, V. Kaushal, M. Margala and P. Ampadu
Título: General Purpose Logic Gate using Ballistic Nanotransistors
Publicación: 11th International Conference on Nanotechnology (NANO 2011), DOI: 10.1109/NANO.2011.6144451

17. Autores: V. Kaushal, I. Íñiguez-de-la-Torre, J. Mateos, M. Margala and T. González
Título: Realization of Logic Operations Through Optimized Ballistic Deflection Transistors
Publicación: 2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS),
DOI: 10.1109/CSICS.2011.6062471

18. Autores: J. F. Millithaler, I. Íñiguez-de-la-Torre, T. González, P. Sangaré, G. Ducournau, C. Gaquiere and J. Mateos
Título: Noise in Terahertz detectors based on semiconductor nanochannels
Publicación: 22nd International Conference on Noise and Fluctuations (ICNF 2013),
DOI: 10.1109/ICNF.2013.6578885

19. Autores: J. F. Millithaler, I. Íñiguez-de-la-Torre, T. González, P. Sangaré, G. Ducournau, C. Gaquière and J. Mateos
Título: Monte Carlo analysis of thermal effects in Self-Switching Diodes
Publicación: 9th Spanish Conference on Electron Devices, CDE-13, IEEE Catalog number: CFP 13589. 978-1-4673-4668-9

20. Autores: I. Íñiguez-de-la-Torre, J. Mateos, T. González, V. Kaushal and M. Margala
Título: Ballistic Deflection Transistor: Geometry Dependence and Boolean Operations
Publicación: 9th Spanish Conference on Electron Devices, CDE-13, IEEE Catalog number: CFP 13589. 978-1-4673-4668-9

21. Autores: J. Mateos, J.-F. Millithaler, I. Íñiguez-de-la-Torre, A. Íñiguez-de-la-Torre, B. G. Vasallo, S. Pérez, T. González, Y. Alimi, L. Zhang, A. Rezazadeh, A. M. Song, P. Sangaré, G. Ducournau, C. Gaquiere, A. Westlund and J. Grahn
Título: Room Temperature THz Detection and Emission with Semiconductor Nanodevices
Publicación: 9th Spanish Conference on Electron Devices, CDE-13, IEEE Catalog number: CFP 13589. 978-1-4673-4668-9

22. Autores: B. G. Vasallo, J. F. Millithaler, I. Íñiguez-de-la-Torre, T. González and J. Mateos
Título: Time-domain Monte Carlo simulation of GaN planar Gunn nanodiodes in resonant circuits
Publicación: 17th International Workshop on Computational Electronics (IWCE)
DOI: 10.1109/IWCE.2014.6865816

23. Autores: Ó. García-Pérez, Y. Alimi, A. Song, I. Íñiguez-de-la-Torre, S. Pérez, J. Mateos, S. Pérez, T. González
Título: Experimental verification of low-frequency noise effects at the onset of oscillations in planar Gunn diodes
Publicación: International Conference on Noise and Fluctuations (ICNF 2015), pp. 1-4,
DOI: 10.1109/ICNF.2015.7288553, ISBN: 978-1-4673-8335-6

24. Autores: S. García, I. Íñiguez-de-la-Torre, O. García-Pérez, J. Mateos, T. González, and S. Pérez
Título: Evaluation of the Thermal Resistance in GaN-Diodes by means of Electro-Thermal Monte Carlo Simulations
Publicación: 10th Spanish Conference on Electron Devices (CDE), Madrid, 2015, pp. 1-4.
DOI: 10.1109/CDE.2015.7087474

25. Autores: O. García-Pérez, I. Íñiguez-de-la-Torre, S. Pérez, J. Mateos, T. González, Y. Alimi and A. M. Song
Título: Anomalous low-frequency noise increase at the onset of oscillations in Gunn diodes
Publicación: 10th Spanish Conference on Electron Devices (CDE), Madrid, 2015, pp. 1-3.
DOI: 10.1109/CDE.2015.7087504

26. Autores: J.-F. Millithaler, P. Marthi, N. Hossain, I. Íñiguez-de-la-Torre, J. Mateos, T. González and M. Margala
Título: Ballistic deflection transistor very high frequency modeling
Publicación: 74th Annual Device Research Conference (DRC), Newark, DE, 2016, pp. 1-2.
DOI: 10.1109/DRC.2016.7548431, ISBN: 978-1-5090-2828-3

27. Autores: P. Marthi, S. Rufsan Reza, N. Hossain, J.-F. Millithaler, I. Íñiguez-de-la-Torre, J. Mateos, T. González and M. Margala
Título: Modeling and study of two-BDT-nanostructure based sequential logic circuits
Publicación: Great Lakes Symposium on VLSI (GLSVLSI 2016)
DOI: 10.1145/2902961.2903001

28. Autores: J.-F. Millithaler, P. Marthi, N. Hossain, I. Íñiguez-de-la-Torre, J. Mateos, T. González and M. Margala
Título: Monte Carlo Modeling of Ultra-Fast Operating BDT based Logical Device
Publicación: Lester Eastman Conference on High Performance Devices
DOI: 10.1109/LEC.2016.7578929

29. Autores: H. Sánchez-Martín, Ó. García-Pérez, I. Íñiguez-de-la-Torre, S. Pérez, T. González, J. Mateos
Título: Characterization and modeling of traps and RF frequency dispersion in AlGaN/AlN/GaN HEMTs
Publicación: 11th European Microwave Integrated Circuits Conference (EuMIC),
DOI: 10.1109/EuMIC.2016.7777513

30. Autores: H. Sánchez-Martín, S. Sánchez-Martín, O. García-Pérez, S. Pérez, J. Mateos, T. González, C. Gaquière and I. Íñiguez-de-la-Torre
Título: Microwave detection up to 43.5 GHz by GaN nano-diodes: Experimental and analytical responsivity
Publicación: 11th Spanish Conference on Electron Devices (CDE), Barcelona, 2017, pp. 1-3.
DOI: 10.1109/CDE.2017.7905251

31. Autores: H. Sánchez-Martín, O. García-Pérez, I. Íñiguez-de-la-Torre,
S. Pérez, J. Mateos, C. Gaquière and T. González
Título: Geometry and bias dependence of trapping effects in planar GaN nanodiodes
Publicación: 11th Spanish Conference on Electron Devices (CDE), Barcelona, 2017, pp. 1-3.
DOI: 10.1109/CDE.2017.7905246

32. Autores: R. Rengel, M. J. Martín, E. Pascual, I. Íñiguez-de-la-Torre y B. G. Vasallo
Título: Recursos audiovisuales en la enseñanza universitaria de la Electrónica: una experiencia aplicada al ámbito de las Ingenierías
Publicación: Congreso Nacional de Innovación Educativa y Docencia en Red (IN-RED), Valencia, 2017,
DOI: http://dx.doi.org/10.4995/INRED2017.2017.6873

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