Journals

1. Autores: I. Íñiguez-de-la-Torre and J. I. Íñiguez
Título: Cycling and wind: does sidewind brake?
Revista: European Journal of Physics 27, 71-74, (2006)

2. Autores: I. Íñiguez-de-la-Torre, J. Mateos, T. González, D. Pardo, J.S. Galloo, S. Bollaert, Y. Roelens and A. Cappy
Título: Influence of the surface charge on the operation of ballistic T-branch junctions: a self-consistent model for Monte Carlo simulations
Revista: Semiconductor Science and Technology 22, pp. 663-670 (2007)

3. Autores: I. Íñiguez-de-la-Torre, T. González, D. Pardo, J. Mateos
Título: Hysteresis phenomena in nanoscale rectifying diodes: A Monte Carlo interpretation in terms of surface effects
Revista: Applied Physics Letters 91, 063504 (2007)
Revista: Virtual Journal of Nanoscale Science & Technology 16 [8] (2007)

4. Autores: T. González, I. Íñiguez-de-la-Torre, D. Pardo, J. Mateos, S. Bollaert, Y. Roelens, and A. Cappy
Título: Monte Carlo simulation of surface charge effects in T-branch nanojunctions
Revista: Physica Status Solidi C 5, pp. 94-97 (2008)

5. Autores: I. Íñiguez-de-la-Torre, T. González, D. Pardo and J. Mateos
Título: Monte Carlo analysis of memory effects in nano-scale rectifying diodes
Revista: Physica Status Solidi C 5, pp. 82-85 (2008)

6. Autores: I. Íñiguez-de-la-Torre, J. Mateos, D. Pardo, and T. González
Título: Monte Carlo analysis of noise spectra in self-switching nanodiodes
Revista: Journal of Applied Physics 103, Art. No. 024502 [1-6] (2008)
Revista: Virtual Journal of Nanoscale Science & Technology 17 [4] (2008)

7. Autores: I. Íñiguez-de-la-Torre, J. Mateos, D. Pardo, A. M. Song and T. González
Título: Noise and terahertz rectification linked by geometry in planar asymmetric nanodiodes
Revista: Applied Physics Letters 94, 093512 (2009)

8. Autores: I. Íñiguez-de-la-Torre, T. González, D. Pardo, C. Gardes, Y. Roelens, S. Bollaert and J. Mateos
Título: Influence of the branches width on the nonlinear output characteristics of InAlAs/InGaAs-based three-terminal junctions
Revista: Journal of Applied Physics 105, 094504 [1-7] (2009)

9. Autores: I. Íñiguez-de-la-Torre, T. González, D. Pardo, C. Gardes, Y. Roelens, S. Bollaert, A. Curutchet, C. Gaquiere and J. Mateos
Título: RF doubling and rectification in three-terminal junctions: experimental characterization and Monte Carlo analysis
Revista: Journal of Physics: Conference Series 193, 012021 [1-4] (2009)

10. Autores: I. Íñiguez-de-la-Torre, H. Rodilla, J. Mateos, D. Pardo, A. M. Song and T. González
Título: Terahertz tunable detection in self-switching diodes based on high mobility semiconductors: InGaAs, InAs and InSb
Revista: Journal of Physics: Conference Series 193, 012082 [1-4] (2009)

11. Autores: T. González, I. Íñiguez-de-la-Torre, D. Pardo, J. Mateos and A. M. Song
Título: Monte Carlo analysis of Gunn oscillations in narrow and wide band-gap asymmetric nanodiodes
Revista: Journal of Physics: Conference Series 193, 012018 [1-4] (2009)

12. Autores: I. Íñiguez-de-la-Torre, J. Mateos, D. Pardo, A. M. Song and T. González
Título: Enhanced Terahertz detection in self-switching diodes
Revista: International Journal of Numerical Modelling – Electronic Networks Devices and Fields 23, pp. 301-314 (2010)

13. Autores: V. Kaushal, I. Íñiguez-de-la-Torre, H. Irie, G. Guarino, W. R. Donaldson, P. Ampadu, R. Sobolewski and M. Margala
Título: A Study of Geometry Effects on the Performance of Ballistic Deflection Transistor
Revista: IEEE Transactions on Nanotechnology 9, 723, (2010).

14. Autores: I. Íñiguez-de-la-Torre, T. González, D. Pardo, C. Gardes, Y. Roelens, S. Bollaert, A. Curutchet, C. Gaquiere and J. Mateos
Título: Three-Terminal Junctions operating as mixers, frequency doublers and detectors: A broad-band frequency numerical and experimental study at room temperature
Revista: Semicond. Sci Technol. 25, 125013 [1-14] (2010)

15. Autores: A. Íñiguez-de-la-Torre, I. Íñiguez-de-la-Torre, T. González and J. Mateos
Título: Correlation between low-frequency current-noise enhancement and high-frequency oscillations in GaN-based planar nanodiodes: A Monte Carlo study
Revista: Applied Physics Letters 99, 062109 (2011)

16. Autores: I. Íñiguez-de-la-Torre, J. Mateos, Y. Roelens, C. Gardes, S. Bollaert and T. González
Título: Evidence of surface charge effects in T-branch nanojunctions using microsecond-pulse testing
Revista: Nanotechnology 22, 445203 [1-5] (2011)

17. Autores: I. Íñiguez-de-la-Torre, S. Purohit, V. Kaushal, M. Margala, M. Gong, R. Sobolewski, D. Wolpert, P. Ampadu, T. González and J. Mateos
Título: Exploring Digital Logic Design Using Ballistic Deflection Transistors Through Monte Carlo Simulations
Revista: IEEE Transactions on Nanotechnology 10, pp. 1337-1346 (2011)

18. Autores: V. Kaushal, I. Íñiguez-de-la-Torre and M. Margala
Título: Nonlinear electron properties of an InGaAs/InAlAs-based ballistic deflection transistor: Room temperature DC experiments and numerical simulations
Revista: Solid-State Electronics 56, 120-129 (2011)

19. Autores: A. Íñiguez-de-la-Torre, I. Íñiguez-de-la-Torre , J. Mateos, T. González, M. Faucher, P. Sangaré, B. Grimbert, V. Brandli, G. Ducournau and C. Gaquiere
Título: Searching for THz Gunn oscillations in GaN planar nanodiodes
Revista: Journal of Applied Physics 111, Art. No. 113705 [1-9] (2012)

20. Autores: V. Kaushal, I. Íñiguez-de-la-Torre, T. González, J. Mateos, B. Lee, V. Misra and M. Margala
Título: Effects of a high-k dielectric on the performance of III-V Ballistic Deflection Transistors
Revista: IEEE Electron Device Letters 33, pp. 1120-1122 (2012)

21. Autores: I. Íñiguez-de-la-Torre, H. Rodilla, J. Mateos, T. González, H. Irie and R. Sobolewski
Título: Monte Carlo studies of the intrinsic time-domain response of nanoscale three-branch junctions
Revista: Journal of Applied Physics 111, Art. No. 084511 [1-4] (2012)

22. Autores: P. Sangaré, G. Ducournau, B. Grimbert, V. Brandli, M. Faucher, C. Gaquiere, A. Íñiguez-de-la-Torre, I. Íñiguez-de-la-Torre, J. F. Millithaler, J. Mateos and T. González
Título: Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels
Revista: Journal of Applied Physics 113, Art. No. 034305 [1-6] (2013)

23. Autores: S. García, I Íñiguez-de-la-Torre, S. Pérez, J. Mateos, and T. González
Título: Numerical study of sub-millimeter Gunn oscillations in InP and GaN vertical diodes: Dependence on bias, doping, and length
Revista: Journal of Applied Physics 114, Art. No. 074503 [1-9] (2013)

24. Autores: J. Torres, P. Nouvel, A. Penot, L. Varani, P. Sangaré, B. Grimbert, M. Faucher, G. Ducourneau, C. Gaquiere, I. Íñiguez de la Torre, J. Mateos and T. Gonzalez
Título: Nonlinear nanochannels for room temperature terahertz heterodyne detection
Revista: Semicond. Sci Technol. 28, 125024 [1-6] (2013)

25. Autores: S. García, S. Pérez, I. Íñiguez-de-la-Torre, J. Mateos, and T. González
Título: Comparative Monte Carlo analysis of InP- and GaN-based Gunn diodes
Revista: Journal of Applied Physics 115, Art. No. 044510 [1-7] (2014)

26. Autores: J.-F. Millithaler, I. Íñiguez de la Torre, A. Íñiguez de la Torre, T. Gonzalez, C. Gaquiere, G. Ducournau, P. Sangaré and J. Mateos
Título: Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations
Revista: Applied Physics Letters 104, 073509 (2014)

27. Autores: A. Westlund, I. Íñiguez-de-la-Torre, P. A. Nilsson, T. González, J. Mateos, P. Sangaré, G. Ducournau, C. Gaquière, L. Desplanque, X. Wallart, and J. Grahn
Título: On the effect of -doping in self-switching diodes
Revista: Applied Physics Letters 105, 093505 [1-5] (2014)

28. Autores: O. García-Pérez, Y. Alimi, A. M. Song, I. Íñiguez-de-la-Torre, S. Pérez, J. Mateos and T. González
Título: Experimental assessment of anomalous low-frequency noise increase at the onset of Gunn oscillations in InGaAs planar diodes
Revista: Applied Physics Letters 105, 113502 [1-4] (2014)

29. Autores: I. Íñiguez-de-la-Torre, C. Daher, J.-F. Millithaler, J. Torres, P. Nouvel, L. Varani, P. Sangaré, G. Ducournau, C. Gaquière, T. Gonzalez and J. Mateos
Título: Operation of GaN planar nanodiodes as THz detectors and mixers
Revista: IEEE Transactions on Terahertz Science and Technology 4, 670-677 (2014)

30. Autores: B. G. Vasallo, J. F. Millithaler, I. Íñiguez-de-la-Torre, T. González, G. Ducournau, C. Gaquière and J. Mate os
Título: Monte Carlo analysis of the operation of GaN planar nanodiodes as sub-THz emitters in resonant circuits
Revista: Semiconductor Science and Technology 29, 115032 [1-9] (2014)

31. Autores: J. Schleeh, J. Mateos, I. Íñiguez-de-la-Torre, N. Wadefalk, P. A. Nilsson, J. Grahn and A. J. Minnich
Título: Phonon black-body radiation limit for heat dissipation in electronics
Revista: Nature Materials 14, 187-192 (2015)

32. Autores: S. García, I. Íñiguez-de-la-Torre, O. García-Pérez, J. Mateos, T. González, P. Sangaré, C. Gaquière and S. Pérez
Título: Self-consistent electro-thermal simulations of AlGaN/GaN diodes by means of Monte Carlo method
Revista: Semiconductor Science and Technology 30, 035001 [1-8] (2015)

33. Autores: A. Westlund, P. Sangaré, G. Ducournau, I. Íñiguez-de-la-Torre, P. A. Nilsson, C. Gaquière, L. Desplanque, X. Wallart, J. F. Millithaler, T. González, J. Mateos and J. Grahn
Título: Optimization and small-signal modeling of zero-bias InAs self-switching diode detectors
Revista: Solid-State Electronics 104, 79-85 (2015)

34. Autores: J.-F. Millithaler, I. Íñiguez-de-la-Torre, J. Mateos, T. González, and M. Margala
Título: Study of surface charges in ballistic deflection transistors
Revista: Nanotechnology 26, 485202 [1-6] (2015)

35. Autores: S. García, I. Íñiguez-de-la-Torre, O. García-Pérez, J. Mateos, T. González and S. Pérez
Título: Modelling of thermal boundary resistance in a GaN diode by means of electro-thermal Monte Carlo simulations
Revista: Journal of Physics: Conference Series 609, 012005 [1-4] (2015)

36. Autores: Y. Akbas, A. Stern, L. Q. Zhang, Y. Alimi, A. M. Song, I. Íñiguez-de-la-Torre, J. Mateos, T. González, G. W. Wicks and R. Sobolewski
Título: Ultrahigh responsivity of optically active, semiconducting asymmetric nano-channel diodes
Revista: Journal of Physics: Conference Series 647, 012013 [1-4] (2015)

37. Autores: C. Daher, J. Torres, I. Íñiguez-de-la-Torre, P. Nouvel, L. Varani, P. Sangaré, G. Ducournau, C. Gaquiere, J. Mateos and T. González
Título: 0.69 THz room temperature heterodyne detection using GaN nanodiodes
Revista: Journal of Physics: Conference Series 647, 012006 [1-4] (2015)

38. Autores: A. Rodríguez, I. Íñiguez-de-la-Torre, O. García-Pérez, S. García, A. Westlund, P. A. Nilsson, J. Grahn, T. González, J. Mateos and S. Pérez
Título: Temperature and surface traps influence on the THz emission from InGaAs diodes
Revista: Journal of Physics: Conference Series 647, 012039 [1-4] (2015)

39. Autores: J. F. Millithaler, I. Íñiguez-de-la-Torre, J. Mateos, T. González and M. Margala
Título: Optimization of Ballistic Deflection Transistors by Monte Carlo Simulations
Revista: Journal of Physics: Conference Series 647, 012066 [1-4] (2015)

40. Autores: Y. Sun, K. Ashida, S. Sasaki, M. Koyama, T. Maemoto, S. Sasa, S. Kasai, I. Íñiguez-de-la-Torre, and T. González
Título: Fabrication and characterization of fully transparent ZnO thin-film transistors and self-switching nano-diodes
Revista: Journal of Physics: Conference Series 647, 012068 [1-4] (2015)

41. Autores: S. García, I. Íñiguez-de-la-Torre, O. García-Pérez, J. Mateos, T. González, and S. Pérez
Título: Modelling of Thermal Boundary Resistance in a GaN Diode by means of Electro-Thermal Monte Carlo Simulations
Revista: Journal of Physics: Conference Series 609, 012005 [1-4] (2015)

42. Autores: C. Daher, J. Torres, I. Íñiguez-de-la-Torre, P. Nouvel, L. Varani, P. Sangaré, G. Ducournau, C. Gaquiere, J. Mateos and T. González
Título: Room temperature direct and heterodyne detection of 0.28 to 0.69 THz waves based on GaN 2DEG unipolar nanochannels
Revista: IEEE Transactions on Electron Devices 63, pp. 353-359 (2016)

43. Autores: S. García, I. Íñiguez-de-la-Torre, J. Mateos, and S. Pérez
Título: Impact of substrate and thermal boundary resistance on the performance of AlGaN/ GaN HEMTs analyzed by means of electrothermal Monte Carlo simulations
Revista: Semiconductor Science and Technology 31, 065005 [1-9] (2016)

44. Autores: P. Marthi, N. Hossain, H. Wang, J.-F. Millithaler, M. Margala, I. Íñiguez-de-la-Torre, J. Mateos, and T. González
Título: Design and analysis of high performance ballistic nanodevice-based sequential circuits using Monte Carlo and Verilog AMS simulations
Revista: IEEE Transactions on Circuits and Systems I: Regular Papers 63, pp. 2236-2244 (2016)

45. Autores: H. Sánchez-Martín, Ó. García-Pérez, S. Pérez, P. Altuntas, V. Hoel, S. Rennesson, Y. Cordier, T. González, J. Mateos and I. Íñiguez-de-la-Torre
Título: Anomalous DC and RF behavior of virgin AlGaN/AlN/GaN HEMTs
Revista: Semiconductor Science and Technology 32, 035011 (8pp) (2017)