PUBLICATIONS
2023
S. García-Sánchez, M. Abou Daher, M. Lesecq, L. Huo, R. Lingaparthi, D. Nethaji, K. Radhakrishnan, I. Íñiguez-de-la-Torre, B. G. Vasallo, S. Pérez, T. González, and J. Mateos
On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes
IEEE Transactions on Electron Devices (2023) DOI: 10.1109/TED.2023.3271610
S. García-Sánchez, R. Rengel, S. Pérez, T. González, and J. Mateos
Deep Learning-Monte Carlo Combined Prediction of Side-Effect Impact Ionization in Highly Doped GaN Diodes
IEEE Transactions on Electron Devices (2023) DOI: 10.1109/TED.2023.3265625
T. Gonzalez, B. Orfao, S. Pérez, J. Mateos, and B. G. Vasallo
Role of impact ionization and self-consistent tunnel injection in Schottky-barrier diodes operating under strong reverse-bias conditions
Applied Physics Express 16, 024003 (2023)
G. Paz-Martínez, I. Íñiguez-de-la-Torre, H. Sánchez-Martín, T. González, and J. Mateos
Analysis of GaN-based HEMTs operating as RF detectors over a wide temperature range
IEEE Transactions on Microwave Theory and Techniques (2023) DOI: 10.1109/TMTT.2023.3238794
2022
G. Paz-Martínez, I. Íñiguez-De-La-Torre, H. Sánchez-Martín, B. García-Vasallo, N. Wichmann, T. González, and J. Mateos
Comparison of GaN and InGaAs high electron mobility transistors as zero-bias microwave detectors
Journal of Applied Physics 132, 134501 (2022)
B. Orfao, G. Di Gioia, B. G. Vasallo, S. Pérez, J. Mateos, Y. Roelens, E. Frayssinet, Y. Cordier, M. Zaknoune, and T. González
Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples
Journal of Applied Physics 132, 044502 (2022)
H. Sánchez-Martín, I. Íñiguez-de-la-Torre, S. García-Sánchez, J. Mateos, and T. González
Monte Carlo analysis of thermal effects in the DC and AC performance of AlGaN/GaN HEMTs
Solid-State Electronics 193, 108289 (2022)
G. Paz-Martínez, I. Íñiguez-de-la-Torre, H. Sánchez-Martín, J. A. Novoa-López, V. Hoel, Y. Cordier, J. Mateos and T. González
Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs
Sensors 22, 1515 (2022)
S. García-Sánchez, I. Íñiguez-de-la-Torre, S. Pérez, T. González, and J. Mateos
Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes
IEEE Transactions on Electron Devices 69, 514 (2022)
2021
E. Pérez-Martín, I. Íñiguez-de-la-Torre, C. Gaquière, T. González, and J. Mateos
Monte Carlo analysis of the influence of surface charges on GaN asymmetric nanochannels: Bias and temperature dependence
Journal of Applied Physics 10, 104501 (2021)
B. Orfao, B. G. Vasallo, S. Pérez, J. Mateos, D. Moro-Melgar, M. Zaknoune, and T. González
Dielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodes
IEEE Transactions on Electron Devices 68, 4296 (2021)
J. A. Novoa-López, G. Paz-Martínez, H. Sánchez-Martín, Y. Lechaux, I. Íñiguez-de-la-Torre, T. González, and J. Mateos
Temperature behavior of Gunn oscillations in planar InGaAs diodes
IEEE Electron Device Letters 42, 1136 (2021)
G. Paz-Martinez, C. G. Treviño-Palacios, J. Molina-Reyes, A. Romero-Morán, E. Cervantes-García, J. Mateos, and T. González
Influence of laser modulation frequency on the performance of terahertz photoconductive switches on semi-insulating GaAs exhibiting negative differential conductance
IEEE Transactions on Terahertz Science and Technology 11, 591 (2021)
S. García-Sánchez, I. Íñiguez-de-la-Torre, S. Pérez, K. Ranjan, M. Agrawal, R. Lingaparthi, D. Nethaji, K. Radhakrishnan, S. Arulkumaran, G. I. Ng, T. González, and J. Mateos
Non-linear thermal resistance model for the simulation of high power GaN-based devices
Semiconductor Science and Technology 36, 055002 (2021)
2020
E. Pérez-Martín, D. Vaquero, H. Sánchez-Martín, C. Gaquière, V. J. Raposo, T. González, J. Mateos, and I. Iñiguez-de-la-Torre
Analysis of trap states in AlGaN/GaN self-switching diodes via impedance measurements
Microelectronics Reliability 114, 113806 (2020)
Y. Lechaux, I. Íñiguez-de-la-Torre, J. A. Novoa-López, O. García-Pérez, H. Sánchez-Martín, J. F. Millithaler, D. Vaquero, J. A. Delgado-Notario, V. Clericò, T. González and J. Mateos
Comprehensive characterization of Gunn oscillations in In0.53Ga0.47As planar diodes
Semiconductor Science and Technology 35, 115009 (2020)
E. Colomés, J. Mateos, T. González, and X. O riols
Noise and charge discreteness as ultimate limit for the T Hz operation of ultra‑small electronic devices
Scientific Reports 10, 15990 (2020)
B. Orfao, B. G. Vasallo, D. Moro-Melgar, S. Pérez, J. Mateos, and T. González
Analysis of surface charge effects and edge fringing capacitance in planar GaAs and GaN Schottky barrier diodes
IEEE Transactions on Electron Devices 9, 3530 (2020)
B. G. Vasallo, J. Mateos. and T. González
Interplay between channel and shot noise at the onset of spiking activity in neural membranes
Journal of Computational Electronics 19, 792 (2020)
E. Pérez-Martín, T. González, D. Vaquero, H. Sánchez-Martín, C. Gaquière, V. J. Raposo, J. Mateos and I. Íñiguez-de-la-Torre
Trap-related frequency dispersion of zero-bias microwave responsivity at low temperature in GaN-based self-switching diodes
Nanotechnology 31, 405204 (2020)
2018
B. G. Vasallo, J. Mateos. and T. González
Ion shot noise in Hodgkin–Huxley neurons
Journal of Computational Electronics 17, (2018)
H. Sánchez-Martín, S. Sánchez-Martín, I. Íñiguez-de-la-Torre , S. Pérez, J. A. Novoa , G. Ducournau, B. Grimbert, C. Gaquière, T. González and J. Mateos
GaN nanodiode arrays with improved design for zero-bias sub-THz detection
Semiconductor Science and Technology 33, 095016 (2018)
H. Sánchez-Martín, J. Mateos, J. A. Novoa, J. A. Delgado-Notario, Y. M. Meziani, S. Pérez, H. Theveneau, G. Ducournau, C. Gaquière, T. González, and I. Íñiguez-de-la-Torre
Voltage controlled sub-THz detection with gated planar asymmetric nanochannels
Applied Physics Letters 113, 043504 (2018)
B. G. Vasallo, T. González, V. Talbo, Y. Lechaux, N. Wichmann, S. Bollaert, and J. Mateos
Impact ionization and band-to-band tunneling in InxGa1-xAs PIN ungated devices: A Monte Carlo analysis
Journal of Applied Physics 123, 034501 [1-5] (2018)
2017
H. Sánchez-Martín, Ó. García-Pérez, S. Pérez, P. Altuntas, V. Hoel, S. Rennesson, Y. Cordier, T. González, J. Mateos and I. Íñiguez-de-la-Torre
Anomalous DC and RF behavior of virgin AlGaN/AlN/GaN HEMTs
Semiconductor Science and Technology 32, 035011 [1-8] (2017)
B. G. Vasallo, F. Galán-Prado, J. Mateos, T. González, S. Hedayat, V. Hoel, and A. Cappy
Stochastic model for action potential simulation including ion shot noise
Journal of Computational Electronics 16, 419-430 (2017)
2016
C. Daher, J. Torres, I. Iñiguez-de-la-Torre, P. Nouvel, L. Varani, P. Sangare, G. Ducournau, C. Gaquière, J. Mateos, and T. González
Room temperature direct and heterodyne detection of 0.28 to 0.69 THz waves based on GaN 2DEG unipolar nanochannels
IEEE Transactions on Electron Devices 63, 353-359 (2016)
P. Marthi, N. Hossain, H. Wang, J.-F. Millithaler, M. Margala, I. Iñiguez-de-la-Torre, J. Mateos, and T. González
Design and analysis of high performance ballistic nanodevice-based sequential circuits using Monte Carlo and Verilog AMS simulations
IEEE Transactions on Circuits and Systems I: Regular Papers 63, 2236-2244 (2016) (2016)
D. Moro-Melgar, A. Maestrini, J. Treuttel, L. Gatilova, T. González, B. G. Vasallo, and J. Mateos
Monte Carlo Study of 2-D Capacitance Fringing Effects in GaAs Planar Schottky Diodes
IEEE Transactions on Electron Devices 63, 3900-3907 (2016)
S. García, I. Íñiguez-de-la-Torre, J. Mateos, T. González and S. Pérez
Impact of substrate and thermal boundary resistance on the performance of AlGaN/ GaN HEMTs analyzed by means of electrothermal Monte Carlo simulations
Semiconductor Science and Technology 31, 065005 [1-9] (2016)
2015
Y. Sun, K. Ashida, S. Sasaki, M. Koyama, T. Maemoto, S. Sasa, S. Kasai, I. Íñiguez-de-la-Torre, and T. González
Fabrication and characterization of fully transparent ZnO thin-film transistors and self-switching nano-diodes
Journal of Physics: Conference Series 647, 012068 [1-4] (2015)
J.-F. Millithaler, I. Iñiguez-de-la-Torre, J. Mateos, T. González, and M. Margala
Optimization of ballistic deflection transistors by Monte Carlo simulations
Journal of Physics: Conference Series 647, 012066 [1-4] (2015)
Y. Lechaux, A. Fadjie, S. Bollaert, V. Talbo, J. Mateos, T. González, B. G. Vasallo, and N. Wichmann
Improvement of interfacial and electrical properties of Al2O3/ n‑Ga0.47In0.53As for III-V impact ionization MOSFETs
Journal of Physics: Conference Series 647, 012062 [1-4] (2015)
Ó. García-Pérez, H. Sánchez-Martín, J. Mateos, S. Pérez, A. Westlund, J. Grahn, and T. González
Shot-noise suppression effects in InGaAs planar diodes at room temperature
Journal of Physics: Conference Series 647, 012061 [1-4] (2015)
V. Talbo, J. Mateos, T. González, Y. Lechaux, N. Wichmann, S. Bollaert and B. G. Vasallo
Monte Carlo model for the analysis and development of III-V Tunnel-FETs and Impact Ionization-MOSFETs
Journal of Physics: Conference Series 647, 012056 [1-4] (2015)
A. Rodríguez, I. Íñiguez-de-la-Torre, Ó. García-Pérez, S. García, A. Westlund, P-Å. Nilsson, J. Grahn T. González, J. Mateos, and S. Pérez,
Temperature and surface traps influence on the THz emission from InGaAs diodes
Journal of Physics: Conference Series 647, 012039 [1-4] (2015)
Y. Akbas, A. Stern, L. Q. Zhang, Y. Alimi, A. M. Song, I. Iñiguez-de-la-Torre, J. Mateos, T. González, G. Wicks, and R. Sobolewski
Ultra-high responsivity of optically-active semiconducting asymmetric nano-channel diodes
Journal of Physics: Conference Series 647, 012013 [1-4] (2015)
C. Daher, J. Torres, I. Iñiguez-de-la-Torre, P. Nouvel, L. Varani, P. Sangare, G. Ducournau, C. Gaquière, J. Mateos, and T. González
0.69 THz room temperature terahertz heterodyne detection using unipolar nanodiodes
Journal of Physics: Conference Series 647, 012006 (2015)
S. Karishy, P. Ziadé, G. Sabatini, H. Marinchio, C. Palermo, L. Varani, J. Mateos, and T. Gonzalez
Review of electron transport properties in bul InGaAs and InAs at room temperature
Lithuanian Journal of Physics 55, 305-314 (2015)
J.-F. Millithaler, I. Iñiguez-de-la-Torre, J. Mateos, T. González, and M. Margala
Study of surface charges in ballistic deflection transistors
Nanotechnology 26, 485202 [1-6] (2015)
V. Talbo, J. Mateos, S. Retailleau, P. Dollfus and T. González
Time-dependent shot noise in multi-level quantum dot-based single-electron devices
Semiconductor Science and Technology 30, 055002 [1-7] (2015)
A. Westlund, P. Sangaré, G. Ducournau, I. Iñiguez-de-la-Torre, P. A. Nilsson, C. Gaquière, L. Desplanque, X. Wallart, J. F. Millithaler, T. González, J. Mateos and J. Grahn
Optimization and small-signal modeling of zero-bias InAs self-switching diode detectors
Solid-State Electronics 104, 79-85 (2015) (2015)
S. García, I. Íñiguez-de-la-Torre, O. García-Pérez, J. Mateos, T. González, P. Sangaré, C. Gaquière and S. Pérez
Self-consistent electro-thermal simulations of AlGaN/GaN diodes by means of Monte Carlo method
Semiconductor Science and Technology 30, 035001 [1-8] (2015)
T. González
Introduction to special issue on noise modelling
Journal of Computational Electronics 14, 1-3 (2015)
S. García, I. Íñiguez-de-la-Torre, O. García-Pérez, J. Mateos, T. González, P. Sangaré, C. Gaquière and S. Pérez
Self-consistent electro-thermal simulations of AlGaN/GaN diodes by means of Monte Carlo method
Semiconductor Science and Technology 30, 035001 [1-8] (2015)
A. Westlund, P. Sangaré, G. Ducournau, I. Iñiguez-de-la-Torre, P. A. Nilsson, C. Gaquière, L. Desplanque, X. Wallart, J. F. Millithaler, T. González, J. Mateos and J. Grahn
Optimization and small-signal modeling of zero-bias InAs self-switching diode detectors
Solid-State Electronics 104, 79-85 (2015)
J. Mateos, H. Rodilla, B. G. Vasallo and T. González
Monte Carlo modelling of noise in advanced III-V HEMTs
Journal of Computational Electronics DOI 10.1007/s10825-014-0653-1 (2015)
2014
S. García, S. Pérez, I. Íñiguez-de-la-Torre, J. Mateos, and T. González
Comparative Monte Carlo analysis of InP- and GaN-based Gunn diodes
Journal of Applied Physics 115, 044510 [1-7] (2014)
J. F. Millithaler, I. Iñiguez-de-la-Torre, A. Iñiguez-de-la-Torre, T. González, P. Sangaré, G. Ducournau, C. Gaquière, and J. Mateos
Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations
Applied Physics Letters 104, 073509 [1-4] (2014)
A. Westlund, I. Iñiguez-de-la-Torre, P. A. Nilsson, T. González, J. Mateos, P. Sangaré, G. Ducournau, C. Gaquière, L. Desplanque, X. Wallart, and J. Grahn
On the effect of d-doping in self-switching diodes
Applied Physics Letters 105, 093505 [1-5] (2014)
O. García-Pérez, Y. Alimi, A. M. Song, I. Iñiguez-de-la-Torre, S. Pérez, J. Mateos and T. González
Experimental assessment of anomalous low-frequency noise increase at the onset of Gunn oscillations in InGaAs planar diodes
Applied Physics Letters 105, 113502 [1-4] (2014)
B. G. Vasallo, J. F. Millithaler, I. Iñiguez-de-la-Torre, T. González, G. Ducournau, C. Gaquière and J. Mateos
Monte Carlo analysis of the operation of GaN planar nanodiodes as sub-THz emitters in resonant circuits
Semiconductor Science and Technology 29, 115032 [1-9] (2014)
I. Iñiguez-de-la-Torre, C. Daher, J.-F. Millithaler, J. Torres, P. Nouvel, L. Varani, P. Sangaré, G. Ducournau, C. Gaquière, T. Gonzalez and J. Mateos
Operation of GaN planar nanodiodes as THz detectors and mixers
IEEE Transactions on Terahertz Science and Technology 4, 670-677 (2014)
D. Moro-Melgar, J. Mateos, T. González and B. G. Vasallo
Effect of tunnel injection through the Schottky gate on the static and noise behavior of GaInAs/AlInAs HEMTs
Journal of Applied Physics 116, 234502 [1-7] (2014)
2013
P. Sangaré, G. Ducournau, B. Grimbert, V. Brandli, M. Faucher, C. Gaquière, A. Íñiguez-de-la-Torre, I. Íñiguez-de-la-Torre, J. F. Millithaler, J. Mateos, and T. González
Experimental demonstration of direct terahertz detection at room temperature in AlGaN/GaN asymmetric nanochannels
Journal of Applied Physics 113, 034305 (2013)
S. García, I. Íñiguez-de-la-Torre, S. Pérez, J. Mateos, and T. González
Numerical study of sub-millimiter Gunn oscillations in InP and GaN vertical diodes: dependence on bias, doping and length
Journal of Applied Physics 114, 074503 (2013)
J. Torres, P. Nouvel, A. Penot, L. Varani, P. Sangaré, B. Grimbert, M. Faucher, G. Ducournau, C. Gaquière, I. Iñiguez-de-la-Torre, J. Mateos and T. Gonzalez
Nonlinear nanochannels for room temperature terahertz heterodyne detection
Semiconductor Science and Technology 28, 125024 [1-6] (2013)
2012
H. Rodilla, T. González, G. Moschetti, J. Grahn and J. Mateos
Monte Carlo study of the noise performance of isolated-gate InAs/AlSb HEMTs
Semiconductor Science and Technology 27, 015008 [1-6] (2012)
I. Iñiguez-de-la-Torre, H. Rodilla, J. Mateos, T. González, H. Irie, and Roman Sobolewski
Monte Carlo studies of the intrinsic time-domain response ofnanoscale three-branch junctions
Journal of Applied Physics 111, 084511 [1-4] (2012)
Virtual Journal of Nanoscale Science & Technology 25 [20] (2012)
B. G. Vasallo, H. Rodilla, T. González, G. Moschetti, J. Grahn, and J. Mateos
Kink effect and noise performance in isolated-gate InAs/AlSb High Electron Mobility Transistors
Semiconductor Science and Technology 27, 065018 [1-5] (2012)
A. Íñiguez-de-la-Torre, I. Íñiguez-de-la-Torre, J. Mateos, T. González, P. Sangaré, G. Ducournau, and C. Gaquière
Searching for THz Gunn oscillations in GaN planar nanodiodes
Journal of Applied Physics 11, 113705 [1-9] (2012)
V. Kaushal, I. Íñiguez-de-la-Torre, T. González, J. Mateos, B. Lee, V. Misra, and M. Margala
Effect of a high-k dielectric on the performance of III-V Ballistic Deflection Transistors
IEEE Electron Device Letters 33, 1120-1122 (2012)
J. Mateos and T. González
Plasma enhanced terahertz rectification and noise in InGaAs HEMTs
IEEE Transactions on Terahertz Science and Technology 2, 562-569 (2012)
D. Pardo, J. Grajal, S. Pérez, T. González and J. Mateos
Analysis of nonharmonic oscillations in Schottky diodes
Journal of Applied Physics 112, 053703 [1-9] (2012)
2011
J.-F. Millithaler, J. Pousset, L. Reggiani, H. Marinchio, L. Varani, C. Palermo, P. Ziade, J. Mateos, T. González and S. Pérez
Transconductance characteristics and plasma oscillations in nanometric InGaAs field effect transistors
Solid-State Electronics 56, 116-119 (2011)
H. Rodilla, T. González, G. Moschetti, J. Grahn and J. Mateos
Dynamic Monte Carlo study of isolated-gate InAs/AlSb HEMTs
Semiconductor Science and Technology 26, 025004 [1-7] (2011)
S. Pérez, J. Mateos, and T. González
Submillimeter-wave oscillations in recessed InGaAs/InAlAs heterostructures: origin and tuneability
Acta Physica Polonica A 119, 111-113 (2011)
B. G. Vasallo, T. González, D. Pardo and J. Mateos
Monte Carlo analysis of the dynamic behavior of InAlAs/InGaAs velocity modulation transistors: a geometrical optimization
Acta Physica Polonica A 119, 193-195 (2011)
B. G. Vasallo, H. Rodilla, T. González, E. Lefebvre, G. Moschetti, J. Grahn, and J. Mateos
Monte Carlo analysis of impact ionization in isolated-gate InAs/AlSb high electron mobility transistors
Acta Physica Polonica A 119, 222-224 (2011)
D. Pardo, J. Grajal, B. Mencía, S. Pérez, J. Mateos and T. González
Analysis of noise spectra in GaAs and GaN Schottky barrier diodes
Semiconductor Science and Technology 26, 055023 [1-11] (2011)
A. Iñiguez-de-la-Torre, I. Iñiguez-de-la-Torre, J. Mateos and T. González
Correlation between low-frequency current-noise enhancement and high-frequency oscillations in GaN-based planar nanodiodes: A Monte Carlo study
Applied Physics Letters 99, 062109 [1-3] (2011)
Virtual Journal of Nanoscale Science & Technology 24 [8] (2011)
I. Íñiguez-de-la-Torre, J. Mateos, Y. Roelens, C. Gardès, S. Bollaert and T. González
Evidence of surface charge effects in T-branch nanojunctions using microsecond-pulse testing
Nanotechnology 22, 445203 [1-5] (2011)
I. Íñiguez-de-la-Torre, S. Purohit, V. Kaushal, M. Margala, M. Gong, R. Sobolewski, D. Wolpert, P. Ampadu, T. González, and J. Mateos
Exploring digital logic design using nano-devices through Monte Carlo simulations
IEEE Transactions on Nanotechnology 10, 1337-1346 (2011)
2010
A. Iñiguez-de-la-Torre, J. Mateos and T. González
Terahertz current oscillation assisted by optical phonon emission in Gan n+nn+ diodes: Monte Carlo simulations
Journal of Applied Physics 107, 053707 [1-6] (2010)
I. Iñiguez-de-la-Torre, J. Mateos, D. Pardo, T. González and A. M. Song
Enhanced Terahertz detection in self-switching diodes
International Journal of Numerical Modeling 23, 301-314 (2010)
F. L. Traversa, F. Bertazzi, F. Bonani, S. Donati, G. Ghione, S. Pérez, J. Mateos and T. González
A generalized drift-diffusion model for rectifying Schottky contact simulation
IEEE Transactions on Electron Devices 57, 1539-1547 (2010)
B. G. Vasallo, N. Wichmann, S. Bollaert, Y. Roelens, A. Cappy, T. González, D. Pardo and J. Mateos
Monte Carlo study of the static and dynamic performance of a 100 nm-gate InAlAs/InGaAs velocity modulation transistor
IEEE Transactions on Electron Devices 57, 2572-2578 2572-2578 (2010)
I. Iñiguez-de-la-Torre, T. González, D. Pardo, C. Gardès, Y. Roelens, S. Bollaert, A. Curutchet, C. Gaquiere and J. Mateos
Three-Terminal Junctions operating as mixers, frequency doublers and detectors. A broad-band frequency numerical and experimental study at room temperature
Semiconductor Science and Technology 25, 125013 [1-14] (2010)
B. G. Vasallo, H. Rodilla, T. González, G. Moschetti, J. Grahn, and J. Mateos
Monte Carlo study of kink effect in isolated-gate InAs/AlSb high electron mobility transistors
Journal of Applied Physics 108, 094505 [1-5] (2010)
2009
J. F. Millithaler, L. Reggiani, J. Pousset, L. Varani, C. Palermo, W. Knap, J. Mateos, T. González, S. Pérez, D. Pardo
A Monte Carlo investigation of plasmonic noise in nanometric InGaAs channels
Journal of Statistical Mechanics: theory and experiment 2009, P01040 [1-12] (2009)
I. Iñiguez-de-la Torre, J. Mateos, D. Pardo, A. M. Song and T. González
Noise and terahertz rectification linked by geometry in planar asymmetric nanodiodes
Applied Physics Letters 94, 093512 [1-3] (2009)
J. F. Millithaler, L. Reggiani, J. Pousset, L. Varani, C. Palermo, J. Mateos, T. González, S. Pérez, D. Pardo
Plasmonic noise in nanometric semiconductor layer
Journal of Statistical Mechanics: Theory and Experiment 2009, P02030 [1-12] (2009)
N. Wichmann, B. G. Vasallo, S. Boolaert, Y. Roelens, X. Wallart, A. Cappy, T. González, D. Pardo and J. Mateos
Fabrication and fundamentals of operation of an InAlAs/InGaAs velocity modulation transistor
Applied Physics Letters 94, 103504 [1-3] (2009)
I. Iñiguez-de-la-Torre, T. González, D. Pardo, C. Gardès, Y. Roelens , S. Bollaert and J. Mateos
Influence of the branches width on the nonlinear output characteristics of InAlAs/InGaAs-based three-terminal junctions
Journal of Applied Physics 105, 094504 [1-7] (2009)
Virtual Journal of Nanoscale Science & Technology 19 [20] (2009)
H. Rodilla, T. González, D. Pardo, and J. Mateos
High-mobility heterostructures based on InAs and InSb: A Monte Carlo study
Journal of Applied Physics 105, 113705 [1-6] (2009)
J. F. Millithaler, J. Pousset, L. Reggiani, P. Ziade, H. Marinchio, L. Varani, C. Palermo, J. Mateos, T. González, S. Pérez, D. Pardo
Monte Carlo investigation of TeraHertz plasma oscillations in gated ultrathin channel of n-InGaAs
Applied Physics Letters 95, 152102 [1-3] (2009)
T. González, I. Iñiguez-de-la Torre, D. Pardo, J. Mateos and A. M. Song
Monte Carlo analysis of Gunn oscillations in narrow and wide band-gap asymmetric nanodiodes
Journal of Physics: Conference Series 193, 012018 [1-4] (2009)
I. Iñiguez-de-la-Torre, T. González, D. Pardo, C. Gardès, Y. Roelens, S. Bollaert, A. Curutchet, C. Gaquiere and J. Mateos
RF doubling and rectification in Three-Terminal Junctions: experimental characterization and Monte Carlo analysis
Journal of Physics: Conference Series 193, 012021 [1-4] (2009)
A. Iñiguez-de-la Torre, T. González and J. Mateos
Current oscillations excited by optical phonon emission in GaN n+nn+ diodes: Monte Carlo simulations
Journal of Physics: Conference Series 193, 012023 [1-4] (2009)
G. Sabatini, H. Marinchio, C. Palermo, L. Varani, T. Daoud, R. Teissier, H. Rodilla, T. González, and J. Mateos
Monte Carlo simulation of ballistic transport in high-mobility channels
Journal of Physics: Conference Series 193, 012035 [1-4] (2009)
I. Iñiguez-de-la-Torre, H. Rodilla, J. Mateos, D. Pardo, A. M. Song and T. González
Terahertz tuneable detection in Self-Switching Diodes based on high mobility semiconductors: InGaAs, InAs and InSb
Journal of Physics: Conference Series 193, 012082 [1-4] (2009)
S. Pérez, J. Mateos, D. Pardo and T. González
On the geometrical tunabililty of THz Gunn-like oscillations in InGaAs/InAlAs slot-diodes
Journal of Physics: Conference Series 193, 012090 [1-4] (2009)
J. Pousset, J.-F. Millithaler, L. Reggiani, G. Sabatini, C. Palermo, L. Varani, J. Mateos, T. González, S. Pérez, D. Pardo, A. Bournel and P. Dollfus
Plasmonic noise in Si and InGaAs semiconductor nanolayers
Journal of Physics: Conference Series 193, 012091 [1-4] (2009)
2008
I. Iñiguez-de-la-Torre, T. González, D. Pardo and J. Mateos
Monte Carlo analysis of memory effects in nano-scale rectifying diodes
Physica Status Solidi (c) 5, 82-85 (2008)
T. González, I. Iñiguez-de-la-Torre, D. Pardo, J. Mateos, S. Bollaert, Y. Roelens and A. Cappy
Monte Carlo simulation of surface charge effects in T-branch nanojunctions
Physica Status Solidi (c) 5, 94-97 (2008)
M. J. Martín, R. Rengel, E. Pascual, J. £usakowski, W. Knap and T. González
Onset of quasi-ballistic transport and mobility degradation in ultra scaled MOSFETs: A Monte Carlo study
Physica Status Solidi (c) 5, 123-126 (2008)
S. Pérez, J. Mateos, D. Pardo and T. González
Excitation of millimeter-wave oscillations in InAlAs/InGaAs heterostructures
Physica Status Solidi (c) 5, 146-149 (2008)
J. F. Millithaler, L. Varani, C. Palermo, J. Pousset, W. Knap, J.Mateos, T. González, S. Pérez, D. Pardo and L. Reggiani
Monte Carlo simulation of plasma oscillations in ultra-thin layers
Physica Status Solidi (c) 5, 249-252 (2008)
I. Iñiguez-de-la-Torre, J. Mateos, D. Pardo and T. González
Monte Carlo analysis of noise spectra in self-switching nanodiodes
Journal of Applied Physics 103, 024502 [1-6] (2008)
Virtual Journal of Nanoscale Science & Technology 17 [5] (2008)
J. F. Millithaler, L. Reggiani, L. Varani, C. Palermo, J. Pousset, W. Knap, J.Mateos, T. González, S. Pérez and D. Pardo
Monte Carlo investigation of THz plasma oscillations in ultra-thin layers of n‑type InGaAs
Applied Physics Letters 92, 042113 [1-3] (2008)
S. Pérez, T. González, D. Pardo and J. Mateos
THz Gunn-like oscillations in InGaAs/InAlAs planar diodes
Journal of Applied Physics 103, 094516 [1-5] (2008)
Virtual Journal of Ultrafast Science 7 [6] (2008)
C. Gardes, Y. Roelens, S. Bollaert, A. Cappy, J.S. Galloo, X. Wallart, C. Gaquiere, A. Curutchet, J. Mateos, T. González, B.G. Vasallo, L. Bednarz, and I. Huynen
Ballistic nanodevices for high-frequency applications
International Journal of Nanotechnology 5, 796-808 (2008)
B. G. Vasallo, N. Wichmann, S. Bollaert, Y. Roelens, A. Cappy, T. González, D. Pardo and J. Mateos
Comparison between the noise performance of double- and single-gate InP-based HEMTs
IEEE Transactions on Electron Devices 55, 1535-1540 (2008)
J. F. Millithaler, L. Reggiani, J. Pousset, G. Sabatini, L. Varani, C. Palermo, J.Mateos, T. González, S. Pérez and D. Pardo
TeraHertz oscillations in ultra-thin n-In0.53Ga0.47As ungated channels
Journal of Physics: Condensed Matter 20, 384210 [1-7] (2008)
2007
S. Bollaert, A. Cappy, Y. Roelens, J. S. Galloo, C. Gardes, Z. Teukam, X. Wallart, J. Mateos, T. González, B. G. Vasallo, B. Hackens, L. Bednarz and I. Huynen
Ballistic nanodevices for high frequency applications
Thin Solid Films 515, 4321-4326 4321-4326 (2007)
I. Iñiguez-de-la-Torre, J. Mateos, T. González, D. Pardo, J. S. Galloo, S. Bollaert, Y. Roelens and A. Cappy
Influence of the surface charge on the operation of ballistic T-branch junctions: a self-consistent model for Monte Carlo simulations
Semiconductor Science and Technology 22, 663-670 (2007)
J. Lusakowski, M. J. Martín, R. Rengel, T. González, R. Tauk, Y. M. Meziani, W. Knap, F. Boeuf and T. Skotnicki
Quasi ballistic transport in nanometer Si metal-oxide-semiconductor field-effect transitors: experimental and Monte Carlo analysis
Journal of Applied Physics 101, 114511 (2007).
Virtual Journal of Nanoscale Science & Technology 15 [25] (2007)
Y. Roelens, J. Mateos, S. Bollaert, J. S. Galloo, B. G. Vasallo, D. Pardo and T. González
Ballistic nanodevices. A new concept in electronic design
Revue E tijdschrift 123, 34-39 (2007)
I. Íñiguez de la Torre, T. González, D. Pardo and J. Mateos
Hysteresis phenomena in nano-scale rectifying diodes. A Monte Carlo interpretation in terms of surface effects
Applied Physics Letters 91, 063504 (2007)
Virtual Journal of Nanoscale Science & Technology 16 [8] (2007)
B. G. Vasallo, N. Wichmann, S. Bollaert, A. Cappy, T. González, D. Pardo and J. Mateos
Comparison between the dynamic performance of double- and single-gate AlInAs/InGaAs HEMTs
IEEE Transactions on Electron Devices 54, 2815-2822 2815-2822 (2007)
2006
R. Rengel, T. González, J. Mateos, D. Pardo, G. Dambrine, F. Danneville, J. P. Raskin and M. J. Martín
A microscopic interpretation of the RF noise performance of fabricated FDSOI MOSFETs
IEEE Transactions on Electron Devices 53, 523-532 (2006)
P. Shiktorov, E. Starikov, V. Gruzinskis, S. Pérez, T. González, L. Reggiani, L. Varani and J. C. Vaissiere
Theoretical investigation of Schottky-barrier diodes noise performance in external resonant circuits
Semiconductor Science and Technology 21, 550-557 (2006)
L. Varani, C. Palermo, J. F. Millithaler, J. C. Vaissiere, E. Starikov, P. Shiktorov, V. Gruzinskis, J. Mateos, S. Pérez, D. Pardo and T. González
Numerical modelling of TeraHertz electronic devices
Journal of Computational Electronics 5, 71-77 (2006)
L. Bednarz, Rashmi, P. Simon, I. Huynen, T. González and J. Mateos
Negative differential transconductance and nonreciprocal effects in Y-branch nanojunction. High-frequency behavior.
IEEE Transactions on Nanotechnology 5, 750-757 (2006)
2005
P. Shiktorov, E. Starikov, V. Gruzinskis, L. Varani, J. C. Vaissiere, L. Reggiani, S. Pérez and T. González
Theoretical investigation of large-signal noise in nanometric Schottky-barrier diodes operating in external resonant circuits
Acta Physica Polonica A 107, 396-399 (2005)
J. Lusakowski, W.Knap, N. Dyakonova, L. Varani, J. Mateos, T. González, T. Parenty, S. Bollaert, A. Cappy and K. Karpierz
Voltage tunable terahertz emission from ballistic nanometer InGaAs/AlInAs transistor
Journal of Applied Physics 97, 064307 [1-7] (2005)
Virtual Journal of Nanoscale Science & Technology 11 [11] (2005)
S. Pérez and T. González
Current noise spectra of Schottky barrier diodes with electron traps in the active layer
Journal of Applied Physics 97, 073708 [1-7] (2005).
J. Mateos, B. G. Vasallo, D. Pardo and T. González
Operation and high-frequency performance of nanoscale unipolar rectifying diodes
Applied Physics Letters 86, 212103 [1-3] (2005)
C. Balocco, A. M. Song, M. Aberg, A. Forchel, T. González, J. Mateos, I. Maximov, M. Missous, A. A. Rezazadeh, J. Saijets, L. Samuelson, D. Wallin, K. Williams, L. Worschech and H. Q. Xu
Microwave detection at 110 GHz by naowires with broken symmetry
Nano Letters 5, 1423-1427 (2005)
B. G. Vasallo, J. Mateos, D. Pardo and T. González
Influence of the kink effect on the dynamic performance of short-channel InAlAs/InGaAs high electron mobility transistors
Semiconductor Science and Technology 20, 956-960 (2005)
2004
P. Shiktorov, E. Starikov, V. Gruzinskis, S. Pérez, T. González, L. Reggiani, L. Varani and J. C. Vaissiere
Monte Carlo simulation of Schottky diodes operating under TeraHertz cyclostationary conditions
IEEE Electron Device Letters 25, 1-3 (2004)
T. González, B. G. Vasallo, D. Pardo and J. Mateos
Room temperature nonlinear transport in ballistic nanodevices
Semiconductor Science and Technology 19, S125-S127 (2004)
P Shiktorov, E Starikov, V Gruzinskis, L Reggiani, L V Varani, J C Vaissiere, S Pérez and T. González
Dynamical formation of hot-carrier intergroup noise under sub-terahertz cyclostationary conditions
Semiconductor Science and Technology 19, S170-S172 (2004)
G Gomila, I R Cantalapiedra, T. González and L Reggiani
Noise temperature reduction by doping in ballistic n+-n-n+ nanodiodes
Semiconductor Science and Technology 19, S209-211 (2004)
B. G. Vasallo, T. González, D. Pardo and J. Mateos
Monte Carlo analysis of four-terminal ballistic rectifiers
Nanotechnology 15, S250-S253 (2004)
J. Mateos, T. González, D. Pardo, S. Bollaert, T. Parenty and A. Cappy
Design optimization of AlInAs/GaInAs HEMTs for high-frequency applications
IEEE Transactions on Electron Devices 51, 521-528 (2004)
D. Persano Adorno, M. Zarcone, G. Ferrante, P. Shiktorov, E. Starikov, V. Gruzinskis, S. Pérez, T. González, L. Reggiani, L. Varani and J. C. Vaissiere
Monte Carlo simulation of high-order harmonics generation in bulk semiconductors and submicron structures
Physica Satus Solidi (c) 1, 1367-1376 (2004)
J. Mateos, B. G. Vasallo, D. Pardo, T. González, E. Pichonat, J. S. Galloo, S. Bollaert, Y. Roelens and A. Cappy
Non-linear effects in T-branch junctions
IEEE Electron Device Letters 25, 235-237 (2004)
B. G. Vasallo, J. Mateos, D. Pardo and T. González
Kink-effect related noise in short-channel InAlAs/InGaAs High Electron Mobility Transistors
Journal of Applied Physics 95, 8271-8274 (2004)
J. Mateos, T. González, D. Pardo, S. Bollaert, T. Parenty and A. Cappy
Design optimization of AlInAs/GaInAs HEMTs for low-noise applications
IEEE Transactions on Electron Devices 51, 1228-1233 (2004)
R. Rengel, T. González and M. J. Martín
On the influence of space-quantization effects on the RF noise behavior of DG MOSFETs
Fluctuation and Noise Letters 4, L561-L569 (2004)
2003
P. Shiktorov, E. Starikov, V. Gruzinskis, S. Pérez, T. González, L. Reggiani, L. Varani, and J. C. Vaissiere
Upconversion of intergroup hot-carrier noise in semiconductors operating under periodic large-signal conditions
Fluctuation and Noise Letters 3, L51-L61 (2003).
J. Mateos, B. G. Vasallo, D. Pardo, T. González, J. S. Galloo, Y. Roelens, S. Bollaert, and A. Cappy
Ballistic nanodevices for THz data processing: Monte Carlo simulations
Nanotechnology 14, 117-122 (2003).
P. Shiktorov, E. Starikov, V. Gruzinskis, S. Pérez, T. González, L. Reggiani, L. Varani, and J. C. Vaissiere
Upconversion of partition noise in semiconductors operating under periodic large-signal conditions
Physical Review B 67, 165201 [1-10] (2003).
P. Shiktorov, E. Starikov, V. Gruzinskis, S. Pérez, T. González, L. Reggiani, L. Varani and J. C. Vaissiere
Monte Carlo simulation of threshold bandwidth for high-order harmonics extraction
IEEE Transactions on Electron Devices 50, 1171-1178 (2003).
T. González, J. Mateos, D. Pardo, G. Gomila, I. R. Cantalapiedra and L. Reggiani
The role of energy correlations on Coulomb suppression of shot noise in ballistic conductors
Physical Review B 68, 075309 [1-6] (2003).
Virtual Journal of Nanoscale Science & Technology 8 [8] (2003).
J. Mateos, B. G. Vasallo, D. Pardo, T. González, J. S. Galloo, S. Bollaert, Y. Roelens and A. Cappy
Microscopic modelling of nonlinear transport in ballistic nanodevices
IEEE Transactions on Electron Devices 50, 1897-1905 (2003).
B. G. Vasallo, J. Mateos, D. Pardo and T. González
Monte Carlo study of kink effect in short-channel InAlAs/InGaAs HEMTs
Journal of Applied Physics 94, 4096-4101 4096-4101 (2003).
E. Starikov, P. Shiktorov, V. Gruzinskis, L. Reggiani, L. Varani, J. C. Vaissiere, S. Pérez and T. González
Monte Carlo simulation of electronic noise in semiconductor materials and devices operating under cyclostationary conditions
Journal of Computational Electronics 2, 455-458 (2003).
2002
R. Rengel, J. Mateos, D. Pardo, T. González and M. J. Martín
RF noise in a short-channel n-MOSFET: a Monte Carlo study
Material Science Forum 384-385, 155-158 (2002).
G. Gomila, T. González and L. Reggiani
Enhanced shot noise in mesoscopic nondegnerate diffusive semiconductors
Physica B 314, 189-192 (2002).
M.J. Martín-Martínez, S. Pérez, D. Pardo and T. González
Influence of Ge profile on the noise behavior of SiGe HBTs under high injection conditions
Physica B 314, 381-385 (2002).
B. G. Vasallo, J. Mateos, D. Pardo, and T. González
Influence of trapping-detrapping processes on shot noise in nondegenerate quasiballistic transport
Semiconductor Science and Technology 17, 440-445 (2002).
S. Pérez and T. González
Monte Carlo analysis of voltage noise in submicron semiconductor structures under large-signal regime
Semiconductor Science and Technology 17, 696 (2002).
G. Gomila, I. R. Cantalapiedra, T. González and L. Reggiani
Semiclassical theory of shot noise in ballistic n+-i-n+ semiconductor structures: relevance of Pauli and long-range Coulomb interaction.
Physical Review B 66, 075302 (2002).
B. G. Vasallo, J. Mateos, D. Pardo, and T. González
Influence of density, occupancy and location of electron traps on shot noise in nondegenerate quasiballistic transport
Fluctuation and Noise Letters 2, 251-259 (2002).
R. Rengel, J. Mateos, D. Pardo, T. González, M. J. Martín, G. Dambrine, F. Danneville, and J.-P. Raskin
Numerical and experimental study of a 0.25 µm Fully-Depleted Silicon-on-Insulator MOSFET: static and dynamic RF behaviour
Semiconductor Science and Technology (en prensa).
2001
J. Mateos, T. González, D. Pardo, V. Hoel and A. Cappy
Monte Carlo simulation of electronic noise in short channel d-doped AlInAs/GaInAs HEMTs
Microelectronics Relialibity 41, 73-77 (2001).
S. Pérez, T. González, S. Delage, and J. Obregon
Monte Carlo analysis of the nfluence of dc conditions on the upconversion of generation-recombination noise in semiconductors
Semiconductor Science and Technology 16, L8-L11 (2001).
M. J. Martín-Martínez, S. Pérez, D. Pardo, and T. González
High Injection Effects on Noise Characteristics of Si BJT’s and SiGe HBT’s
Microelectronics Reliability 41, 847-854 (2001).
M. J. Martín-Martínez, S. Pérez, D. Pardo, and T. González
Monte Carlo analysis of the noise behavior in Si BJT’s and SiGe HBT’s at RF frequencies
Journal of Applied Physics 90, 1582-1588 (2001).
R. Rengel, J. Mateos, D. Pardo, T. González and M. J. Martín
Monte Carlo analysis of dynamic and noise performance of submicron MOSFET at RF and microwave frequencies
Semiconductor Science and Technology 16, 939-946 (2001).
P. Shiktorov, E. Starikov, V. Gruzinskis, T. González, J. Mateos, D. Pardo, L. Reggiani, L. Varani, and J. C. Vaissiere
Transfer-field methods for electronic noise in submicron semiconductor structures
Rivista Nuovo Cimento 24(9), 1-71 (2001).
P. Shiktorov, E. Starikov, V. Gruzinskis, T. González, J. Mateos, D. Pardo L. Reggiani, L. Varani and J. C. Vaissiere
Langevin forces and generalized transfer fields for noise modelling in deep submicron devices
VLSI Design 13, 85 (2001).
2000
J. Mateos, T. González, D. Pardo, V. Hoel, H. Happy and A. Cappy
Improved Monte Carlo algorithm for the simulation of d-doped AlInAs/GaInAs HEMTs
IEEE Transactions on Electron Devices 47, 250-253 (2000).
L. Reggiani, A. Reklaitis, T. González, J. Mateos, D. Pardo, and O. M. Bulashenko
Monte Carlo investigation of shot-noise suppression in nondegenerate ballistic and diffusive transport regimes
Australian Journal of Physics 53, 3-34 (2000).
S. Pérez, T. González, S. Delage, and J. Obregon
Microscopic analysis of generation-recombination noise in semiconductors under dc and time-varying electric fields
Journal of Applied Physics 88, 800-807 (2000).
P. Shiktorov, E. Starikov, V. Gruzinskis, T. González, J. Mateos, D. Pardo, L. Reggiani, L. Varani, and J. C. Vaissiere
Langevin forces and generalized transfer fields for noise modeling of deep submicron devices
IEEE Transactions on Electron Devices 47, 1992-1998 (2000).
J. Mateos, T. González, D. Pardo, V. Hoel, and A. Cappy
Monte Carlo simulator for the design optimization of low-noise HEMTs
IEEE Transactions on Electron Devices 47, 1950-1956 (2000).
L. Reggiani, C. Pennetta, Gy. Trefán, J.C. Vaissiere, L. Varani, V. Gruzhinskis, A. Reklaitis, P. Shiktorov, E. Starikov, T. González, J. Mateos, D. Pardo and O. M. Bulashenko
Frontiers in electronic noise: from submicron to nanostructures
International Journal of High Speed Electronics and Systems 10, 111-117 (2000).
T. González, J. Mateos, D. Pardo, O. M. Bulashenko and L. Reggiani
Effect of dimensionality on shot-noise suppression in nondegenerate diffusive conductors
Microelectronics Relialibity 40, 1951-1954 (2000).
1999
T. González
Shot-noise suppression in nondegenerate conductors
Material Science Forum 297-298, 139-146 (1999)
P. Shiktorov, J. C. Vaissiere, L. Varani, J. P. Nougier, E. Starikov, V. Gruzinskis, T. González, J. Mateos, D. Pardo and L. Reggiani
Hydrodynamic modeling of spatial cross-correlation of conduction current fluctuations
Material Science Forum 297-298, 147-150 (1999)
P. Shiktorov, E. Starikov, V. Gruzinskis, T. González, J. Mateos, D. Pardo, L. Reggiani, L. Varani, J. C. Vaissiere, and J. P. Nougier
Spatio-temporal correlation of conduction current fluctuations within a hydrodynamic-Langevin scheme
Applied Physics Letters 74, 723-725 (1999)
X. Oriols, J.J. García-García, F. Martín, J. Suñé, J. Mateos, T. González, D. Pardo and O. Vanbesien
Towards the Monte Carlo simulation of resonant tunneling diodes using time-dependent wavepackets and Bohm trejectories
Semiconductor Science and Technology 14, 532-542 (1999)
T. González, J. Mateos, D. Pardo, O. M. Bulashenko, and L. Reggiani
Microscopic analysis of shot-noise suppression in nondegenerate diffusive conductors
Physical Review B 60, 2670-2679 2670-2679 (1999)
T. González, C. González, J. Mateos, D. Pardo, L. Reggiani O. M. Bulashenko and J. M. Rubí
González et al. Reply:
Physical Review Letters 83, 1268 (1999)
J. Mateos, T. González, D. Pardo, V. Hoel, and A. Cappy
Effect of the T-gate on the performance of recessed HEMTs. A Monte Carlo analysis
Semiconductor Science and Technology 14, 864-870 (1999).
T. González, J. Mateos, D. Pardo, L. Varani, and L. Reggiani
Injection statistics simulator for dynamic analysis of noise in mesoscopic devices
Semiconductor Science and Technology 14, L37-L40 (1999)
T. González, J. Mateos, D. Pardo, O. M. Bulashenko and L. Reggiani
Shot-noise suppression in nondegenerate semiconductors: the role of an energý-dependent scattering time
Physica B 272, 282-284 (1999)
L. Varani, P. Gaubert, J. C. Vaissiere, J. P. Nougier, J. Mateos, T. González, D. Pardo, L. Reggiani, E. Starikov, P. Shiktorov, and V. Gruzinskis
Thermal conductivity of nonequilibrium carriers in semiconductors
Physica B 272, 247-249 (1999)
T. González, J. Mateos, D. Pardo and L. Reggiani
Joint effect of Fermi and Coulomb correlations on shot-noise suppression in ballistic conductors
Physica B 272, 285-287 (1999)
E. Starikov, P. Shiktorov, V. Gruzinskis, L. Reggiani, L. Varani, J. C. Vaissiere, J. P. Nougier, T. González, J. Mateos and D. Pardo
Generalized transfer fields and Langevin forces for hot-carriers fluctuations in semiconductor submicron devices
Physica B 272, 260-262 (1999)
1998
O. Bulashenko, J. Mateos, D. Pardo, T. González, L. Reggiani and J. M. Rubí
Electron-number statistics and shot-noise suppression by Coulomb correlation in nondegenrate ballistic transport
Physical Review B 57, 1366-1369 (1998)
E. Starikov, P. Shiktorov, V. Gruzinskis, L. Varani, J. C. Vaissiere, J. P. Nougier, T. González, J. Mateos, D. Pardo and L. Reggiani
Transfer impedance calculations of electronic noise in two-terminal n+nn+ structures
Journal of Applied Physics 83, 2052-2066 (1998)
X. Oriols, J.J. García-García, F. Martín, J. Suñé, T. González, J. Mateos and D. Pardo
Bohm trajectories for the Monte Carlo simulation of quantum-based devices
Applied Physics Letters 72, 806-808 (1998)
J. Mateos, T. González, D. Pardo, P. Tadyszak, F. Daneville and A. Cappy
Noise analysis of 0.1 nm gate MESFETs and HEMTs
Solid-State Electronics 42, 79-85 (1998)
T. González, C. González, J. Mateos, D. Pardo, L. Reggiani O. M. Bulashenko and J. M. Rubí
Universality of the 1/3 shot-noise suppression factor in nondegenerate diffusive conductors
Physical Review Letters 80, 2901-2904 2901-2904 (1998)
P. Shiktorov, E. Starikov, V. Gruzinskis, L. Reggiani, T. González, J. Mateos, D. Pardo and L. Varani
An acceleration fluctuation scheme for diffusion noise sources within a generalized impedance field method
Physical Review B 57, 11866-11869 11866-11869 (1998)
J. Mateos, D. Pardo, T. González, P. Tadyszak, F. Daneville and A. Cappy
Influence of the Al mole fraction on the noise performance of GaAs/AlxGa1-xAs HEMTs
IEEE Transactions on Electron Devices 45, 2081-2083 (1998)
T. González, J. Mateos, D. Pardo, O. M. Bulashenko and L. Reggiani
Microscopic analysis of shot-noise suppression in nondegenerate ballistic transport
Semiconductor Science and Technlolgy 13, 714-724 (1998)
1997
L. Reggiani, P. Golinelli, L. Varani, T. González, D. Pardo, E. Starikov, P. Shiktorov and V. Gruzinskis
Monte Carlo analysis of electronic noise in semiconductor materials an devices
Microelectronics Journal 28, 183-198 (1997)
J. Suñé, X. Oriols, J. J. García-García, F. Martín, T. González, J. Mateos and D. Pardo
Bohm trajectories for the modeling of tunneling devices
Microelectronic Engineering 36, 125-128 (1997)
T. González, O. Bulashenko, J. Mateos, D. Pardo, L. Reggiani and J. M. Rubí
Noise suppression due to long-range Coulomb interaction: Crossover between diffusive and ballistic transport regimes
Semiconductor Science and Technology 9, 1053-1056 (1997)
T. González, D. Pardo, L. Varani and L. Reggiani
Microscopic analysis of electron noise in GaAs Schottky-barrier diodes.
Journal of Applied Physics 82, 2349-2358 (1997)
T. González, O. Bulashenko, J. Mateos, D. Pardo and L. Reggiani
Effect of long-range Coulomb interaction on shot-noise suppression in ballistic transport
Physical Review B 56, 6424-6427 (1997)
P. Golinelli, R. Brunetti, L. Varani, J. C. Vaissiere, J. P. Nougier, L. Reggiani, E. Starikov, P. Shiktorov, V. Gruzinskis T. González, M. J. Martín and D. Pardo
Hot-carrier thermal conductivity from the simulation of submicron semiconductor structures
Semiconductor Science and Technology 12, 1511-1513 (1997)
T. González, O. Bulashenko, J. Mateos, D. Pardo, L. Reggiani and J. M. Rubí
Shot-noise suppression in mesoscopic structures due to long-range Coulomb interaction
Physica Status Solidi (b) 204, 450-452 (1997)
P. Shiktorov, V. Gruzinskis, E. Starikov, T. González, J. Mateos, D. Pardo, L. Reggiani and L. Varani
On the spectral strength of the noise source entering the transfer impedance method
Applied Physics Letters 71, 3093-3095 3093-3095 (1997)
J. Mateos, T. González, D. Pardo, P. Tadyszak, F. Daneville and A. Cappy
Noise and transit time in ungated FET structures
IEEE Transactions on Electron Devices 44, 2128-2135 (1997)
X. Oriols, J. J. García-García, F. Martín, J. Suñé, T. González, J. Mateos and D. Pardo
Quantum Monte Carlo simulation of tunneling devices using Bohm trajectories
Physica Status Solidi (b) 204, 404-407 (1997)
1996
M. J. Martín, T. González, D. Pardo and J. E. Velázquez
Monte Carlo analysis of a Schottky diode with an automatic space-variable charge algorithm
Semiconductor Science and Technology 11, 380-387 (1996)
T. González and D. Pardo
Physical models of ohmic contact for Monte Carlo device simulation
Solid-State Electronics 39, 555-562 (1996)
E. Starikov, P. Shiktorov, V. Gruzinskis, T. González, M. J. Martín, D. Pardo, L. Reggiani and L. Varani
Hydrodynamic and Monte Carlo simulation of steady-state transport and noise in submicrometer n+nn+ Silicon structures
Semiconductor Science and Technology 11, 865-872 (1996)
J. Mateos, T. González, D. Pardo, P. Tadyszak, F. Daneville and A. Cappy
Numerical and experimental analysis of static characteristics and noise in ungated recessed MESFET structures
Solid-State Electronics 39, 1629-1636 (1996)
1995
J. Mateos, T. González and D. Pardo
Spatial extent of the correlation between local diffusion noise sources in GaAs
Journal of Applied Physics 77, 1564-1568 (1995)
L. Varani, L. Reggiani, T. Kuhn, T. González and D. Pardo
Theory of electronic noise in semiconductor materials and devices.
Il Vuoto, Scienza e Tecnologia 24, 64-68 (1995)
T. González and D. Pardo
Monte Carlo determination of the small-signal equivalent circuit of MESFET’s
IEEE Transactions on Electron Devices ED-42, 605-611 (1995)
T. González, D. Pardo, L. Varani and L. Reggiani
Monte Carlo analysis of the behavior and spatial origin electronic noise in GaAs MESFET’s
IEEE Transactions on Electron Devices ED-42, 991-997 (1995)
J. Mateos, T. González and D. Pardo
Influence of spatial correlations on the analysis of diffusion noise in submicron semiconductor structures
Applied Physics Letters 67, 685-687 (1995)
L. Reggiani, L. Varani, T. González, D. Pardo, E. Starikov, P. Shiktorov and V. Gruzinskis
High frequency noise spectra in semiconductor materials and devices
Lithuanian Journal of Physics 35, 395-403 (1995)
1994
T. González, D. Pardo, L. Varani and L. Reggiani
A microscopic interpretation of hot-electron noise in Schottky-barrier diodes
Semiconductor Science and Technology 9, 580-583 (1994)
L. Varani, L. Reggiani, P. Houlet, J. C. Vaissière, J. P. Nougier, T. Kuhn, T. González and D. Pardo
Hot-carrier fluctuations from ballistic to diffusive regimes in submicron semiconductor structures
Semiconductor Science and Technology 9, 584-587 (1994)
M. J. Martín, T. González, D. Pardo and J. E. Velázquez
One-dimensional Monte Carlo analysis of electron transport in submicron silicon structures
Semiconductor Science and Technology 9, 1316-1323 (1994)
L. Varani, L. Reggiani, T. Kuhn, T. González and D. Pardo
Microscopic simulation of electronic noise in semiconductor materials and devices (invited paper)
IEEE Transactions on Electron Devices ED-41, 1916-1925 (1994)
1993
T. González and D. Pardo
Ensemble Monte Carlo with Poisson solver for the study of current fluctuations in homogeneous GaAs structures
Journal of Applied Physics 73, 7453-7464 7453-7464 (1993)
T. González, D. Pardo, L. Varani and L. Reggiani
Spatial analysis of electronic noise in submicron semiconductor structures
Applied Physics Letters 63, 84-86 (1993)
M. J. Martín, T. González, J. E. Velázquez and D. Pardo
Simulation of electron transport in Silicon: impact-ionization processes
Semiconductor Science and Technology 8, 1291-1297 (1993)
T. González, D. Pardo, L. Varani and L. Reggiani
Monte Carlo analysis of noise spectra in Schottky-barrier diodes
Applied Physics Letters 63, 3040-3042 3040-3042 (1993)
1992
T. González, J. E. Velázquez, P. M. Gutiérrez and D. Pardo
Electron transport in InP under high electric field conditions
Semiconductor Science and Technology 7, 31-36 (1992)
T. González, J. E. Velázquez, P. M. Gutiérrez and D. Pardo
Monte-Carlo analysis of the transient spectral density of velocity fluctuations in semiconductors
Applied Physics Letters 60, 613-615 (1992)
T. González, J. E. Velázquez, P. M. Gutiérrez and D. Pardo
Analysis of the transient spectral density of velocity fluctuations in GaAs and InP
Journal of Applied Physics 72, 2322-2330 (1992)
L. Varani, L. Reggiani, T. Kuhn, P. Houlet, T. González and D. Pardo
Number and current fluctuations in submicron semiconductor structures in ballistic and diffusive regimes
Il Vuoto, Scienza e Tecnologia 22, 116-119 (1992)
1991
T. González, J. E. Velázquez y D. Pardo
Método de Monte Carlo aplicado al transporte de electrones en alto campo para GaAs
Anales de Física B 87, 29-38 (1991)
T. González, J. E. Velázquez, P. M. Gutiérrez and D. Pardo
Five-valley model for the study of electron transport properties at very high electric fields in GaAs
Semiconductor Science and Technology 6, 862-871 (1991)
Y. Sun, K. Ashida, S. Sasaki, M. Koyama, T. Maemoto, S. Sasa, S. Kasai, I. Íñiguez-de-la-Torre, and T. González
Fabrication and characterization of fully transparent ZnO thin-film transistors and self-switching nano-diodes
Journal of Physics: Conference Series 647, 012068 [1-4] (2015)
J.-F. Millithaler, I. Iñiguez-de-la-Torre, J. Mateos, T. González, and M. Margala
Optimization of ballistic deflection transistors by Monte Carlo simulations
Journal of Physics: Conference Series 647, 012066 [1-4] (2015)
Y. Lechaux, A. Fadjie, S. Bollaert, V. Talbo, J. Mateos, T. González, B. G. Vasallo, and N. Wichmann
Improvement of interfacial and electrical properties of Al2O3/ n‑Ga0.47In0.53As for III-V impact ionization MOSFETs
Journal of Physics: Conference Series 647, 012062 [1-4] (2015)
Ó. García-Pérez, H. Sánchez-Martín, J. Mateos, S. Pérez, A. Westlund, J. Grahn, and T. González
Shot-noise suppression effects in InGaAs planar diodes at room temperature
Journal of Physics: Conference Series 647, 012061 [1-4] (2015)
V. Talbo, J. Mateos, T. González, Y. Lechaux, N. Wichmann, S. Bollaert and B. G. Vasallo
Monte Carlo model for the analysis and development of III-V Tunnel-FETs and Impact Ionization-MOSFETs
Journal of Physics: Conference Series 647, 012056 [1-4] (2015)
A. Rodríguez, I. Íñiguez-de-la-Torre, Ó. García-Pérez, S. García, A. Westlund, P-Å. Nilsson, J. Grahn T. González, J. Mateos, and S. Pérez,
Temperature and surface traps influence on the THz emission from InGaAs diodes
Journal of Physics: Conference Series 647, 012039 [1-4] (2015)
Y. Akbas, A. Stern, L. Q. Zhang, Y. Alimi, A. M. Song, I. Iñiguez-de-la-Torre, J. Mateos, T. González, G. Wicks, and R. Sobolewski
Ultra-high responsivity of optically-active semiconducting asymmetric nano-channel diodes
Journal of Physics: Conference Series 647, 012013 [1-4] (2015)
C. Daher, J. Torres, I. Iñiguez-de-la-Torre, P. Nouvel, L. Varani, P. Sangare, G. Ducournau, C. Gaquière, J. Mateos, and T. González
0.69 THz room temperature terahertz heterodyne detection using unipolar nanodiodes
Journal of Physics: Conference Series 647, 012006 (2015)
S. Karishy, P. Ziadé, G. Sabatini, H. Marinchio, C. Palermo, L. Varani, J. Mateos, and T. Gonzalez
Review of electron transport properties in bul InGaAs and InAs at room temperature
Lithuanian Journal of Physics 55, 305-314 (2015)
J.-F. Millithaler, I. Iñiguez-de-la-Torre, J. Mateos, T. González, and M. Margala
Study of surface charges in ballistic deflection transistors
Nanotechnology 26, 485202 [1-6] (2015)
V. Talbo, J. Mateos, S. Retailleau, P. Dollfus and T. González
Time-dependent shot noise in multi-level quantum dot-based single-electron devices
Semiconductor Science and Technology 30, 055002 [1-7] (2015)
A. Westlund, P. Sangaré, G. Ducournau, I. Iñiguez-de-la-Torre, P. A. Nilsson, C. Gaquière, L. Desplanque, X. Wallart, J. F. Millithaler, T. González, J. Mateos and J. Grahn
Optimization and small-signal modeling of zero-bias InAs self-switching diode detectors
Solid-State Electronics 104, 79-85 (2015) (2015)
S. García, I. Íñiguez-de-la-Torre, O. García-Pérez, J. Mateos, T. González, P. Sangaré, C. Gaquière and S. Pérez
Self-consistent electro-thermal simulations of AlGaN/GaN diodes by means of Monte Carlo method
Semiconductor Science and Technology 30, 035001 [1-8] (2015)
T. González
Introduction to special issue on noise modelling
Journal of Computational Electronics 14, 1-3 (2015)
2022
G. Paz-Martínez, I. Íñiguez-De-La-Torre, H. Sánchez-Martín, B. García-Vasallo, N. Wichmann, T. González, and J. Mateos
Comparison of GaN and InGaAs high electron mobility transistors as zero-bias microwave detectors
Journal of Applied Physics 132, 134501 (2022)
B. Orfao, G. Di Gioia, B. G. Vasallo, S. Pérez, J. Mateos, Y. Roelens, E. Frayssinet, Y. Cordier, M. Zaknoune, and T. González
Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples
Journal of Applied Physics 132, 044502 (2022)
H. Sánchez-Martín, I. Íñiguez-de-la-Torre, S. García-Sánchez, J. Mateos, and T. González
Monte Carlo analysis of thermal effects in the DC and AC performance of AlGaN/GaN HEMTs
Solid-State Electronics 193, 108289 (2022)
G. Paz-Martínez, I. Íñiguez-de-la-Torre, H. Sánchez-Martín, J. A. Novoa-López, V. Hoel, Y. Cordier, J. Mateos and T. González
Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs
Sensors 22, 1515 (2022)
S. García-Sánchez, I. Íñiguez-de-la-Torre, S. Pérez, T. González, and J. Mateos
Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes
IEEE Transactions on Electron Devices 69, 514 (2022)
2021
B. Orfao, B. G. Vasallo, D. Moro-Melgar, M. Zaknoune, G. Di Gioia, M. Samnouni, S. Pérez, T. González, and J. Mateos
Technological Parameters and Edge Fringing Capacitance in GaN Schottky Barrier Diodes: Monte Carlo Simulations
2021 13th Spanish Conference on Electron Devices (CDE) DOI: 10.1109/CDE52135.2021.9455727 (2021)
E. Pérez-Martín, I. Íniguez-De-La-Torre, T. González, C. Gaquière, and J Mateos
Bias-dependence of surface charge at low temperature in GaN Self-Switching Diodes
2021 13th Spanish Conference on Electron Devices (CDE) DOI: 10.1109/CDE52135.2021.9455737 (2021)
E. Pérez-Martín, I. Íñiguez-de-la-Torre, C. Gaquière, T. González, and J. Mateos
Monte Carlo analysis of the influence of surface charges on GaN asymmetric nanochannels: Bias and temperature dependence
Journal of Applied Physics 10, 104501 (2021)
B. Orfao, B. G. Vasallo, S. Pérez, J. Mateos, D. Moro-Melgar, M. Zaknoune, and T. González
Dielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodes
IEEE Transactions on Electron Devices 68, 4296 (2021)
J. A. Novoa-López, G. Paz-Martínez, H. Sánchez-Martín, Y. Lechaux, I. Íñiguez-de-la-Torre, T. González, and J. Mateos
Temperature behavior of Gunn oscillations in planar InGaAs diodes
IEEE Electron Device Letters 42, 1136 (2021)
G. Paz-Martinez, C. G. Treviño-Palacios, J. Molina-Reyes, A. Romero-Morán, E. Cervantes-García, J. Mateos, and T. González
Influence of laser modulation frequency on the performance of terahertz photoconductive switches on semi-insulating GaAs exhibiting negative differential conductance
IEEE Transactions on Terahertz Science and Technology 11, 591 (2021)
S. García-Sánchez, I. Íñiguez-de-la-Torre, S. Pérez, K. Ranjan, M. Agrawal, R. Lingaparthi, D. Nethaji, K. Radhakrishnan, S. Arulkumaran, G. I. Ng, T. González, and J. Mateos
Non-linear thermal resistance model for the simulation of high power GaN-based devices
Semiconductor Science and Technology 36, 055002 (2021)
2020
E. Pérez-Martín, D. Vaquero, H. Sánchez-Martín, C. Gaquière, V. J. Raposo, T. González, J. Mateos, and I. Iñiguez-de-la-Torre
Analysis of trap states in AlGaN/GaN self-switching diodes via impedance measurements
Microelectronics Reliability 114, 113806 (2020)
Y. Lechaux, I. Íñiguez-de-la-Torre, J. A. Novoa-López, O. García-Pérez, H. Sánchez-Martín, J. F. Millithaler, D. Vaquero, J. A. Delgado-Notario, V. Clericò, T. González and J. Mateos
Comprehensive characterization of Gunn oscillations in In0.53Ga0.47As planar diodes
Semiconductor Science and Technology 35, 115009 (2020)
E. Colomés, J. Mateos, T. González, and X. O riols
Noise and charge discreteness as ultimate limit for the T Hz operation of ultra‑small electronic devices
Scientific Reports 10, 15990 (2020)
B. Orfao, B. G. Vasallo, D. Moro-Melgar, S. Pérez, J. Mateos, and T. González
Analysis of surface charge effects and edge fringing capacitance in planar GaAs and GaN Schottky barrier diodes
IEEE Transactions on Electron Devices 9, 3530 (2020)
B. G. Vasallo, J. Mateos. and T. González
Interplay between channel and shot noise at the onset of spiking activity in neural membranes
Journal of Computational Electronics 19, 792 (2020)
E. Pérez-Martín, T. González, D. Vaquero, H. Sánchez-Martín, C. Gaquière, V. J. Raposo, J. Mateos and I. Íñiguez-de-la-Torre
Trap-related frequency dispersion of zero-bias microwave responsivity at low temperature in GaN-based self-switching diodes
Nanotechnology 31, 405204 (2020)
