Publicaciones indexadas

Soy coautora de mas de 40 trabajos de investigación originales, publicados en revistas indexadas. Aquí se presentan las 10 últimas publicaciones, pudiendo ampliarse la información en la web de nuestro grupo de investigación http://nanoelec.usal.es/journals

Impact of substrate and thermal boundary resistance on the performance of AlGaN/ GaN HEMTs analyzed by means of electrothermal Monte Carlo simulations

- S. García, I. Íñiguez-de-la-Torre, J. Mateos, T. González and S. Pérez
- Semiconductor Science and Technology 31, 065005 [1-9] (2016)

Electrical and noise modelling of GaAs Schottky diode mixers in the THz band

- D. Pardo, J. Grajal, and S. Pérez
- IEEE Transactions on Terahertz Science and Technology 6, 69-82 (2016)

Shot-noise suppression effects in InGaAs planar diodes at room temperature

- Ó. García-Pérez, H. Sánchez-Martín, J. Mateos, S. Pérez, A. Westlund, J. Grahn, and T. González
- Journal of Physics: Conference Series 647, 012061 [1-4] (2015)

Temperature and surface traps influence on the THz emission from InGaAs diodes

- A. Rodríguez, I. Íñiguez-de-la-Torre, Ó. García-Pérez, S. García, A. Westlund, P-Å. Nilsson, J. Grahn T. González, J. Mateos, and S. Pérez,
- Journal of Physics: Conference Series 647, 012039 [1-4] (2015)

Nonequilibrium transport in GaAs Schottky mixers at 2.5 THz

- D Pardo, J Grajal, and S Pérez
- Journal of Physics: Conference Series 647, 012038 [1-4] (2015)

Self-consistent electro-thermal simulations of AlGaN/GaN diodes by means of Monte Carlo method

- S. García, I. Íñiguez-de-la-Torre, O. García-Pérez, J. Mateos, T. González, P. Sangaré, C. Gaquière and S. Pérez
- Semiconductor Science and Technology 30, 035001 [1-8] (2015)

An assessment of available models for the design of Schottky-based multipliers up to THz frequencies

- D. Pardo, J. Grajal, C. G. Pérez-Moreno, and S. Pérez
- IEEE Transactions on Terahertz Science and Technology 4, 277-286 (2014)

Experimental assessment of anomalous low-frequency noise increase at the onset of Gunn oscillations in InGaAs planar diodes

- O. García-Pérez, Y. Alimi, A. M. Song, I. Iñiguez-de-la-Torre, S. Pérez, J. Mateos and T. González
- Applied Physics Letters 105, 113502 [1-4] (2014)

Comparative Monte Carlo analysis of InP- and GaN-based Gunn diodes

- S. García, S. Pérez, I. Íñiguez-de-la-Torre, J. Mateos, and T. González
- Journal of Applied Physics 115, 044510 [1-7] (2014)

Numerical study of sub-millimiter Gunn oscillations in InP and GaN vertical diodes: dependence on bias, doping and length

- S. García, I. Íñiguez-de-la-Torre, S. Pérez, J. Mateos, and T. González
- Journal of Applied Physics 114, 074503 [1-9] (2013)