Pascual E., Iglesias J. M., Martín M. J., Rengel R., and Kalna, K., “Monte Carlo Simulations for 2D Materials: Parallelization Strategy and Degeneracy in MoS2″, ImagineNano 2020, Bilbao, Spain, April 2020.
Iglesias J. M., Martín M. J., Pascual E., Hamham E. M., and Rengel R., “Collinear scattering in the relaxation dynamics of photoexcited graphene”, 21st International Conference on Electron Dynamics in Semiconductors, EDISON 2019, Nara, Japan, July 2019.
Pascual E., Iglesias J. M., Hamham E. M., Martín M. J. and Rengel R., “Microscopic analysis of electronic transport in MoS2″, 21st International Conference on Electron Dynamics in Semiconductors, EDISON 2019, Nara, Japan, July 2019.
Iglesias J. M., Pascual E., Hamham E. M., Martín M. J. and Rengel R., “Impact ionization and Auger recombination in graphene under stationary electric fields”, Graphene Conference 2019, Rome, Italy, June 2019.
Pascual E., Iglesias J. M., Hamham E. M., Martín M. J. and Rengel R., “Diffusive electronic transport in MoS2: a Monte Carlo study”, 12th Spanish Conference on Electron Devices (CDE2018), Salamanca, Spain, November 2018.
Iglesias J. M., Pascual E., Hamham E. M., Martín M. J. and Rengel R., “The Role of interband processes on electronic transport in monolayer graphene”, 12th Spanish Conference on Electron Devices (CDE2018), Salamanca, Spain, November 2018.
Feijoo P. C., Iglesias J. M., Hamham E. M., Rengel R. and Jiménez D., “Impact of impurities, defects and residual carrier concentration on high frequency performance of hBN-encapsulated graphene field-effect transistors”, 12th Spanish Conference on Electron Devices (CDE2018), Salamanca, Spain, November 2018.
Feijoo P. C., Pasadas F., Iglesias J. M., Martín M. J., Rengel R., Jiménez D., “Investigation of high frequency performance of hBN encapsulated Graphene Field-Effect Transistors”, ImagineNano 2018, Bilbao, Spain, March 2018.
Hamham E.M., Iglesias J. M., Martín M. J., Rengel R., “A Monte Carlo study of electronic transport in silicene: importance of out-of-equilibrium phonons”, ImagineNano 2018, Bilbao, Spain, March 2018.
Iglesias J. M., Hamham E.M., Martín M. J., Pascual E., Rengel R., “Monte Carlo simulation of harmonic generation in graphene under AC applied fields”, Graphene Week 2017, Athens, Greece, September 2017.
Iglesias J. M., Hamham E.M., Martín M. J., Pascual E., Jiménez D., Feijoo P. C., Pasadas F., Rengel R., “Graphene encapsulated on h-BN: an analysis of mobility and saturation velocity for GFET operation, 20th International Conference on Electron Dynamics in Semiconductors, EDISON 2017, Buffalo, USA, July 2017.
Zurrón O., Iglesias J. M., Rengel R., Martín M. J. and Plaja L., “High order harmonic generation in graphene”, CLEO Europe 2017 Conference on Lasers and Electro-Optics, Munich, Germany, June 2017
Zurrón O., Iglesias J. M., Rengel R., Martín M. J. and Plaja L., “Non perturbative high harmonic generation in graphene”, X Spanish Optoelectronics Meeting (OPTOEL 2017), Santiago de Compostela, Spain, June 2017
Feijoo P. C., Pasadas F., Iglesias J. M., Martín M. J., Rengel R., Jiménez D., “Impact of scattering mechanisms and dimensions scaling in Graphene Field-Effect transistors ”, 11th Spanish Conference on Electron Devices (CDE2017), Barcelona, Spain, February 2017.
Rengel R., Iglesias J. M., Pascual E. and Martín M. J., “A combined Monte Carlo-balance equations approach for the study of small-signal and noise properties of graphene”, 11th Spanish Conference on Electron Devices (CDE2017), Barcelona, Spain, February 2017.
Iglesias J. M., Martín M. J., Pascual E. and Rengel R., “Impact of Self-heating and Hot Phonons on the Drift Velocity in Graphene”, 11th Spanish Conference on Electron Devices (CDE2017), Barcelona, Spain, February 2017.
Zurrón O., Iglesias J. M., Rengel R., Martín M. J., and Plaja L. “High harmonic generation in graphene: Temporal and spectral properties”, Ultrafast Phenomena and Nanophotonics XXI (SPIE OPTO 2017), San Francisco, USA, January 2017.
Iglesias J. M., Martín M. J., Pascual E. and Rengel R., “Substrate-dependent Out-of-equilibrium Phonon and Electron Dynamics in Photoexcited Graphene”, 7th International Conference on Advanced Nanomaterials (ANM2016), Aveiro, Portugal, July 2016.
Iglesias J. M., Rengel R., Pascual E. y Martín M. J., “Monte Carlo study of velocity fluctuations during transient regimes in graphene”, 7th International Conference on Unsolved Problems on Noise (UPON2015), Barcelona, España, Julio 2015.
Iglesias J. M., Martín M. J., Pascual E. y Rengel R., “A Monte Carlo study on the hot carrier relaxation dynamics in photoexcited graphene”, 19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON19), Salamanca, España, Junio 2015.
Rengel R., Iglesias J. M., Pascual E. y Martín M. J., “Effect of charged impurity scattering on the electron diffusivity and mobility in graphene”, 19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON19), Salamanca, España, Junio 2015.
Iglesias J. M., Martín M. J., y Rengel R., “High electric field transport in graphene: impact of screened coulomb interactions”, Graphene Conference 2015, Bilbao, España, Marzo 2015.
Rengel R., Iglesias J. M., Pascual E. and Martín M. J., “Monte Carlo modelling of mobility and microscopic transport in supported graphene”, 10th Spanish Conference on Electron Devices (CDE 2015), Aranjuez, Spain, February 2015.
Iglesias J. M., Martín M. J., Pascual E. and Rengel R., “Influence of systematic gate alignment variations on static characteristics in DG-SB-MOSFETs”, 10th Spanish Conference on Electron Devices (CDE 2015), Aranjuez, Spain, February 2015.
Rengel R., Pascual E. and Martín M. J., “Impact of the temperature and remote phonon scattering on charge transport in supported graphene”, 15th Trends in Nanotechnology International Conference (TNT 14), Barcelona, Spain, October 2014.
Raúl Rengel and Maria J. Martin “Influence of the Dispersion Relationship on Electronic Transport in Suspended Graphene” 18th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON 18), Matsue (Japan), July 22-26, 2013.
Maria J. Martin, Raúl Rengel, Michelly de Souza and Marcelo Antonio Pavanello ”Impact of the Gate Length on the Transport Properties of Graded-Channel SOI n-MOSFETs”, 18th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON 18), Matsue (Japan), July 22-26, 2013.
Maria J. Martin, Carlos Couso, Raúl Rengel. “Velocity and momentum fluctuations in Suspended Monolayer Graphene”, International Conference on Noise and Fluctuations (ICNF 2013)”, Montpellier (France), June 2013.
Raúl Rengel, Carlos Couso and María J. Martín. “A Monte Carlo Study of Electron Transport in Suspended Monolayer Graphene”, 9ª Conferencia de Dispositivos Electrónicos (CDE 2013), Valladolid (España), Febrero de 2013
Carlos Couso,Raúl Rengel and María J. Martín, “Schottky Barrier MOSFETs working in the linear regime: A Monte Carlo study of microscopic transport. 9ª Conferencia de Dispositivos Electrónicos (CDE 2012), Valladolid (España), Febrero de 2013
José S. García, María J. Martín, Raúl Rengel. “Space quantization effects in Double Gate SB‐MOSFETs: role of the active layer thickness” , 9ª Conferencia de Dispositivos Electrónicos (CDE 2011), Valladolid (España), Febrero de 2013
Couso C., Pascual E., Galeote J. M, Martín M. J.and Rengel R. “ Effect of the dopant segregation layer on the static characteristics of Schottky-Barrier n-MOSFETs”, 8ª Internacional Caribbean Conferencia on Devices, Circuits and Systems (ICCDCS 2012), Mejico, Marzo 2012.
Galeote J. M.; Pascual E.; Rengel R.; Martín M. J. “A Monte Carlo study of the influence of scaling in SB-MOSFETs: static and dynamic characteristics”, EUROSOI 2012. Montpellier, Francia, Enero de 2012.
Pascual E., Rengel R., y Martín M. J., “Influence of the underlap length on the RF noise performance of a Schottky Barrier MOSFET”, 21st International Conference on Noise and Fluctuations (ICNF 2011), Toronto (Canada), Junio de 2011
Galeote J. M., Rengel R., Pascual E., y Martín M. J., “A Monte Carlo model for the study of n-type strained Silicon Schottky devices”, 8ª Conferencia de Dispositivos Electrónicos (CDE 2011), Palma de Mallorca (España), Febrero de 2011
Martín M. J., Rengel R., Galeote J. M., de Souza M. y Pavanello M. A., “Monte Carlo simulation of graded-channel fully depleted SOI nMOSFETs”, 8ª Conferencia de Dispositivos Electrónicos (CDE 2011), Palma de Mallorca (España), Febrero de 2011
Rengel R., Martín M. J. y Danneville F., “Comparative study of Laterally Asymmetric Channel and conventional MOSFETs”, 7 ª Conferencia de Dispositivos Electrónicos (CDE 2009), Santiago de Compostela (España), Febrero de 2009
Pascual E., Rengel R. y Martín M. J., “Current drive in n- type Schottky Barrier MOSFETs: a Monte Carlo study”, 7 ª Conferencia de Dispositivos Electrónicos (CDE 2009), Santiago de Compostela (España), Febrero de 2009
Martín M. J., Pascual E., González T. y Rengel R, “Ballistic transport and RF Noise in ultra-scaled SOI MOSFETs: a Monte Carlo study”, Fourth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (EUROSOI 2008), Cork (Irlanda), Enero de 2008
Martín M. J., Rengel R, Pascual E. y González T., “RF Noise and Scaling in Nanometer SOI MOSFETs: Influence of Quasiballistic Transport”, 19th International Conference on Noise and Fluctuations (ICNF 2007), Tokyo (Japón), Septiembre de 2007
Pascual E., Rengel R., Reckinger N., Tang X., Bayot V., Dubois E. y Martín M. J., “Monte Carlo analysis of carrier transport in fabricated back-to-back Schottky diodes: influence of direct quantum tunnelling and temperature”, 15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-15), Tokyo (Japón), Julio de 2007
Martín M. J., Rengel R, Pascual E., Lusakowski J., Knap W. y González T., “Onset of quasi-ballistic transport and mobility degradation in ultra scaled MOSFETs: a Monte Carlo study”, 15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-15), Tokyo (Japón), Julio de 2007
Pascual E., Rengel R. y Martín M. J., “Monte Carlo analysis of quantum tunneling and thermionic transport in a reverse biased Schottky diode”, 6ª Conferencia de Dispositivos Electrónicos (CDE 2007), El Escorial (España), Febrero de 2007
Martín M. J., Rengel R., Pascual E. y González T., “Monte Carlo analysis of carrier transport from diffusive to ballistic regime in nanometer SOI MOSFETs ”, 6ª Conferencia de Dispositivos Electrónicos (CDE 2007), El Escorial (España), Febrero de 2007
Martín M. J., y Rengel R., “A Monte Carlo study of downscaled FD SOI MOSFETs: mean free paths and transit times evaluated through an improved treatment of simulation results”, Second Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits EUROSOI 2006, Grenoble (Francia), Marzo de 2006
Rengel R., Martín M. J., Pailloncy G., Dambrine G., y Danneville F., “On the high-frequency noise figures of merit and microscopic channel noise sources in fabricated 90 nm PD SOI MOSFETs”, 18th International Conference on Noise and Fluctuations (ICNF 2005), Salamanca (España), Septiembre de 2005
Martín M. J., y Rengel R., “Statistical investigation of electronic transport in decananometer gatelength SOI MOSFETs”, 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-14), Chicago (EE.UU.), Julio de 2005
Rengel R., Mateos J., González T., Pardo D., Dambrine G., Danneville F., Raskin J.-P. y Martín M. J., “Investigation of longitudinal velocity fluctuations in MOSFETs by means of ensemble Monte Carlo simulation”, 4th International Conference on Unsolved Problems on Noise (UPoN2005), Gallipoli (Italia), Junio de 2005
Rengel R., Martín M. J., Pailloncy G., Dambrine G., y Danneville F., “Monte Carlo characterization of fabricated Partially-Depleted SOI MOSFETs: high-frequency performance ”, 5ª Conferencia De Dispositivos Electrónicos (CDE 2005), Tarragona (España), Febrero de 2005
Rengel R., Martín M. J., Pailloncy G., Dambrine G., y Danneville F., “Numerical and experimental investigation of the RF dynamic and noise performance of sub-100 nm Partially-Depleted SOI MOSFETs”, First Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits EUROSOI 2005, Granada (España), Enero de 2005
Rengel R., González T. y Martín M. J., “Monte Carlo particle-based simulation of DG MOSFETs: influence of space-quantization effects on the high-frequency noise”, SPIE’s 2nd International Symposium on Fluctuations and Noise, Gran Canaria (España), Mayo de 2004
Rengel R. Pardo D. y Martín M. J., “Influence of 2D electrostatic effects on the high-frequency noise behaviour of sub-100 nm scaled MOSFETs”, SPIE’s 2nd International Symposium on Fluctuations and Noise, Gran Canaria (España), Mayo de 2004
Rengel R., Pardo D. y Martín M. J., “Towards the nano-scale: influence of scaling on the electronic transport and small-signal behaviour of MOSFETs”, Trends in NanoTechnology TNT 2003, Salamanca, Septiembre de 2003
Rengel R., Mateos J., Pardo D., González T., Martín M. J., Dambrine G., Danneville F. Raskin J.-P., “Microscopic analysis of the high-frequency noise behaviour of Fully-Depleted Silicon-On-Insulator MOSFETs”, 17th International Conference on Noise and Fluctuations ICNF03, Praga (República Checa), Agosto de 2003
Rengel R., Pardo D. y Martín M. J., “2D Ensemble Monte Carlo modeling of bulk and FDSOI MOSFETs: active layer thickness and noise performance”, 13th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors HCIS13, Módena (Italia), Julio de 2003
Rengel R., Mateos J., Pardo D., González T., Martín M. J., Dambrine G., Danneville F. y Raskin J.-P., “High-Frequency noise in FDSOI MOSFETs: a Monte Carlo investigation”, SPIE’s 1st International Symposium on Fluctuations and Noise, Santa Fe (USA), Junio de 2003
Rengel R., Pardo D. y Martín M. J., “Comparative Study of the Dynamic Performance of Bulk and FDSOI MOSFET by means of a Monte Carlo Simulation”, 11th Symposium on SOI Technology and Devices, Paris (Francia), Abril de 2003
Rengel R., Pardo D. y Martín M. J., “Impact of downscaling on dynamic and noise parameters of submicron MOSFETs”, 4ª Conferencia de Dispositivos Electrónicos CDE2003, Barcelona, Febrero de 2003
Rengel R., Mateos J., Pardo D., González T., Martín M. J., Dambrine G., Danneville F. y Raskin J.-P., “Dynamic and Noise Behavior of Short-Gate FDSOI MOSFETs: Numerical and Experimental analysis”, 4ª Conferencia de Dispositivos Electrónicos CDE2003, Barcelona, Febrero de 2003
