[1]
J. E. Velazquez-Perez y Y. G. Gurevich, «Charge-carrier transport in thin film solar cells: New formulation», International Journal of Photoenergy, vol. 2011, 2011.
[2]
Y. M. Meziani, E. Garcia, E. Velazquez, E. Diez, A. El Moutaouakil, T. Otsuji, y K. Fobelets, «Strained silicon modulation field-effect transistor as a new sensor of terahertz radiation», Semiconductor Science and Technology, vol. 26, no. 10, 2011.
[3]
J. E. Velázquez-Pérez y Y. G. Gurevich, «Current-voltage characteristic of a p-n junction: Problems and solutions», in 2010 27th International Conference on Microelectronics, MIEL 2010 – Proceedings, 2010, pp. 91–94.
[4]
Y. Shadrokh, K. Fobelets, y J. E. Velazquez-Perez, «Tuneable CMOS and current mirror circuit with double-gate screen grid field effect transistors», in Materials Research Society Symposium Proceedings, 2010, vol. 1252, pp. 11–16.
[5]
I. N. Volovichev, J. E. Velázquez-Pérez, y Y. G. Gurevich, «Transport boundary conditions for solar cells», Solar Energy Materials and Solar Cells, vol. 93, no. 1, pp. 6–10, 2009.
[6]
Y. Shadrokh, K. Fobelets, y J. E. Velazquez-Perez, «Optimizing the screen-grid field effect transistor for high drive current and low miller capacitance», in Materials Research Society Symposium Proceedings, 2009, vol. 1174, pp. 149–156.
[7]
K. Fobelets y J. E. Velázquez-Pérez, «Noise in strained Si MOSFETs for low-power applications», Journal of Statistical Mechanics: Theory and Experiment, vol. 2009, no. 1, 2009.
[8]
K. Fobelets, S. L. Rumyantsev, P. W. Ding, y J. E. Velazquez-Perez, «1/f noise in p-channel screen-grid field effect transistors (SGrFETs) as a device evaluation tool», in AIP Conference Proceedings, 2009, vol. 1129, pp. 349–352.
[9]
K. G. Eng, K. Fobelets, y J. E. Velazquez-Perez, «Screen-grid field effect transistor for sensing bio-molecules», in Materials Research Society Symposium Proceedings, 2009, vol. 1191, pp. 127–132.
[10]
J. Calvo-Gallego, K. Fobelets, y J. E. Velazquez Pérez, «Analysis of RF noise performance of Si/SiGe pseudomorphic MOSFETs», in Proceedings of the 2009 Spanish Conference on Electron Devices, CDE’09, 2009, pp. 479–482.
[11]
I. N. Volovichev, J. E. Velázquez-Pérez, y Y. G. Gurevich, «New boundary conditions for the study of charge transport in solid-state devices», in 2008 26th International Conference on Microelectronics, Proceedings, MIEL 2008, 2008, pp. 151–154.
[12]
I. N. Volovichev, J. E. Velázquez-Perez, y Y. G. Gurevich, «Transport boundary condition for semiconductor structures», Solid-State Electronics, vol. 52, no. 11, pp. 1703–1709, 2008.
[13]
Y. Shadrokh, K. Fobelets, y J. E. Velazquez-Perez, «Comparison of the multi-gate functionality of screen-grid field effect transistors with finFETs», Semiconductor Science and Technology, vol. 23, no. 9, 2008.
[14]
K. Fobelets y J. E. Velazquez-Perez, «Unipolar rectifying silicon nanowires-TCAD study», Physica E: Low-Dimensional Systems and Nanostructures, vol. 40, no. 7, pp. 2481–2484, 2008.
[15]
K. Fobelets, P. W. Ding, Y. Shadrokh, y J. E. Velazquez-Perez, «Analog and digital performance of the screen-grid field effect transistor (SGRFET)», International Journal of High Speed Electronics and Systems, vol. 18, no. 4, pp. 783–792, 2008.
[16]
E. Velázquez, Y. Vega, M. E. Trujillo, A. Peix, P. Sancho, I. Valverde, C. Tejedor, A. Chordi, R. Nájera, y E. Velázquez, «High-speed gel microelectrophoresis, a new and easy approach for detection of PCR-amplified microbial DNA from environmental and clinical samples in microgels using conventional equipment», Letters in Applied Microbiology, vol. 44, no. 6, pp. 654–659, 2007.
[17]
Y. Shadrokh, K. Fobelets, y J. E. Velazquez-Perez, «Single device logic using 3D gating of screen grid field effect transistors», in Proceedings of the International Semiconductor Conference, CAS, 2007, vol. 1, pp. 45–48.
[18]
Y. G. Gurevich, G. N. Logvinov, J. E. Velázquez, y O. Y. Titov, «Transport and recombination in solar cells: New perspectives», Solar Energy Materials and Solar Cells, vol. 91, no. 15–16, pp. 1408–1411, 2007.
[19]
K. Fobelets, J. E. Velazquez-Perez, y T. Hackbarth, «Study of MOS-gated strained-Si buried channel Field Effect Transistors», IETE Journal of Research, vol. 53, no. 3, pp. 253–262, 2007.
[20]
K. Fobelets, P. W. Ding, y J. E. Velazquez-Perez, «A novel 3D embedded gate field effect transistor – Screen-grid FET – Device concept and modelling», Solid-State Electronics, vol. 51, no. 5, pp. 749–756, 2007.
[21]
E. Velásquez, R. Rivas, M. del Villar, A. Valverde, A. Peix, P. F. Mateos, E. Velázquez, y E. Martinez-Molina, «A new approach for separating low-molecular-weight RNA molecules by staircase electrophoresis in non-sequencing gels», Electrophoresis, vol. 27, no. 9, pp. 1732–1738, 2006.
[22]
G. N. Logvinov, J. E. Velázquez, I. M. Lashkevych, y Y. G. Gurevich, «Heating and cooling in semiconductor structures by an electric current», Applied Physics Letters, vol. 89, no. 9, 2006.
[23]
G. N. Logvinov, M. C. Irisson, I. M. Lashkevych, J. E. Velazquez, y Y. G. Gurevich, «Boundary conditions in theory of photothermal processes», Brazilian Journal of Physics, vol. 36, no. 3 B, pp. 1097–1100, 2006.
[24]
Y. G. Gurevich, J. E. Velázquez-Pérez, y O. Y. Titov, «Space charge and transport of nonequilibrium carriers in bipolar semiconductors», in 2006 3rd International Conference on Electrical and Electronics Engineering, 2006.
[25]
Y. G. Gurevich, O. Y. Titov, G. N. Logvinov, y J. E. Velázquez-Pérez, «Kinetic approach to the heating of electrons and phonons in semiconductors», in 2006 3rd International Conference on Electrical and Electronics Engineering, 2006.
[26]
Y. G. Gurevich y J. E. Velázquez-Pérez, «Transport of non-equilibrium charge carriers in bipolar semiconductor materials», in 2006 25th International Conference on Microelectronics, MIEL 2006 – Proceedings, 2006, pp. 337–340.
[27]
K. Fobelets, P. W. Ding, y J. E. Velazquez-Perez, «A novel 3D embedded gate Field Effect Transistor: Device concept and modelling», in 2006 25th International Conference on Microelectronics, MIEL 2006 – Proceedings, 2006, pp. 487–490.
[28]
P. Dollfus, A. Bournel, S. Galdin-Retailleau, y J. E. Velázquez, «Thermal noise in nanometric DG-MOSFET», Journal of Computational Electronics, vol. 5, no. 4, pp. 479–482, 2006.
[29]
P. W. Ding, K. Fobelets, y J. E. Velazquez-Perez, «3D modelling of the novel nanoscale screen-grid FET», in Materials Research Society Symposium Proceedings, 2006, vol. 913, pp. 185–190.
[30]
A. Peix, R. Rivas, E. Velázquez, P. F. Mateos, E. Martínez-Molina, A. Muñoz-Herrera, A. Gómez-Alonso, y E. Velázquez, «Application of horizontal staircase electrophoresis in agarose minigels to the random intergenic spacer analysis of clinical samples», Electrophoresis, vol. 26, no. 23, pp. 4402–4410, 2005.
[31]
V. Gaspari, K. Fobelets, J. E. Velazquez-Perez, y T. Hackbarth, «DC performance of deep submicrometer Schottky-gated n-channel Si:SiGe HFETs at low temperatures», IEEE Transactions on Electron Devices, vol. 52, no. 9, pp. 2067–2074, 2005.
[32]
K. Fobelets y J. E. Velázquez, «Noise in nanometric s-Si MOSFET for low-power applications», in AIP Conference Proceedings, 2005, vol. 780, pp. 275–278.
[33]
P. Dollfus, A. Bournel, y J. E. Velázquez, «3D Monte Carlo study of thermal noise in DG-MOSFET», in AIP Conference Proceedings, 2005, vol. 780, pp. 749–752.
[34]
J. E. Velázquez, K. Fobelets, y V. Gaspari, «Impact of the scaling on the noise performance of deep-submicron Si/SiGe n-channel FETs», in Proceedings of SPIE – The International Society for Optical Engineering, 2004, vol. 5470, pp. 573–580.
[35]
J. E. Velázquez, K. Fobelets, y V. Gaspari, «Study of current fluctuations in deep-submicron Si/SiGe n-channel MOSFET: Impact of relevant technological parameters on the thermal noise performance», Semiconductor Science and Technology, vol. 19, no. 4 SPEC. ISS., p. S191–S194, 2004.
[36]
V. Gaspari, K. Fobelets, J. E. Velazquez-Perez, M. J. Prest, y T. E. Whall, «Dynamic threshold mode operation of p-channel Si and strained-SiGe MOSFETs between 10 K and 300 K», Semiconductor Science and Technology, vol. 19, no. 9, p. L95–L98, 2004.
[37]
V. Gaspari, K. Fobelets, J. E. Velazquez-Perez, T. Hackbarth, y U. König, «Anomalous behavior of buried strained-Si channel heterojunction fets at low temperatures», in Proceedings – Electrochemical Society, 2004, vol. 7, pp. 313–318.
[38]
V. Gaspari, K. Fobelets, J. E. Velazquez-Perez, R. Ferguson, K. Michelakis, S. Despotopoulos, y C. Papavassilliou, «Effect of temperature on the transfer characteristic of a 0.5 μm-gate Si:SiGe depletion-mode n-MODFET», Applied Surface Science, vol. 224, no. 1–4, pp. 390–393, 2004.
[39]
V. Gaspari, K. Fobelets, P. W. Ding, J. W. Velazquez-Perez, S. H. Olsen, A. G. O’Neill, y J. Zhang, «Temperature dependence of submicrometer strained-Si surface channel n-type MOSFETs in DT mode», IEEE Electron Device Letters, vol. 25, no. 5, pp. 334–336, 2004.
[40]
K. Fobelets, W. Jeamsaksiri, C. Papavasilliou, T. Vilches, V. Gaspari, J. E. Velazquez-Perez, K. Michelakis, T. Hackbarth, y U. König, «Comparison of sub-micron Si:SiGe heterojunction nFETs to Si nMOSFET in present-day technologies», Solid-State Electronics, vol. 48, no. 8, pp. 1401–1406, 2004.
[41]
P. Dollfus, J. E. Velázquez, A. Bournel, y S. Galdin-Retailleau, «3D monte carlo analysis of discrete dopant effects on electron noise in Si devices», in 2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts, 2004, pp. 58–59.
[42]
P. Dollfus, J. E. Velázquez, A. Bournel, y S. Galdin-Retailleau, «3D Monte Carlo analysis of discrete dopant effects on electron noise in Si devices», Journal of Computational Electronics, vol. 3, no. 3–4, pp. 311–315, 2004.
[43]
W. Jeamsaksiri, J. E. Velázquez, y K. Fobelets, «Optimised n-channel Si/SiGe HFETs design for VTH shift immunity», Solid-State Electronics, vol. 46, no. 12, pp. 2241–2245, 2002.
[44]
S. Barraud, P. Dollfus, S. Galdin, R. Rengel, M. J. Martín, y J. E. Velázquez, «An ionised-impurity scattering model for 3D Monte Carlo device simulation with discrete impurity distribution», VLSI Design, vol. 13, no. 1–4, pp. 399–404, 2001.
[45]
J. E. Velázquez, W. Jeamsaksiri, J. C. Yeoh, y K. Fobelets, «Design of nearly body-effect free Si/SiGe MODFETs», in Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO, 2000, pp. 32–37.
[46]
M. J. Martín, D. Pardo, y J. E. Velázquez, «Microscopic analysis of the influence of Ge profiles on the current-noise operation mode of n-Si/p-Si1-xGex heterostructures», Semiconductor Science and Technology, vol. 15, no. 3, pp. 277–285, 2000.
[47]
M. J. Martín, D. Pardo, y J. E. Velázquez, «Microscopic analysis of voltage noise operation mode in SiGe/Si bipolar heterojunctions: Influence of the SiGe strained layer», Journal of Applied Physics, vol. 88, no. 3, pp. 1511–1514, 2000.
[48]
P. Dollfus, S. Galdin, P. Hesto, y J. E. Velazquez, «Monte Carlo study of sub-0.1 μm Si0.97C0.03/Si MODFET: electron transport and device performance», IEEE Transactions on Electron Devices, vol. 47, no. 6, pp. 1247–1250, 2000.
[49]
M. J. Martín Martínez, D. Pardo, y J. E. Velázquez, «2D bipolar Monte Carlo calculation of current fluctuations at the onset of quasisaturation of a Si BJT», Physica B: Condensed Matter, vol. 272, no. 1–4, pp. 263–266, 1999.
[50]
M. J. M. Martinez, D. Pardo, y J. E. Velázquez, «Microscopic analysis of the influence of strain and band-gap offsets on noise characteristics in Si1-xGex/Si heterojunctions», Journal of Applied Physics, vol. 84, no. 9, pp. 5012–5020, 1998.
[51]
M. J. Martín, D. Pardo, y J. E. Velázquez, «Study of current-mode noise of Si1-xGex/Si strained heterojunctions», Physica Status Solidi (B) Basic Research, vol. 204, no. 1, pp. 462–465, 1997.
[52]
M. J. Martín, D. Pardo, y J. E. Velázquez, «Analysis of voltage noise in forward-biased silicon bipolar homojunctions: Low- and high-injection regimes», Applied Physics Letters, vol. 71, no. 23, pp. 3382–3384, 1997.
[53]
J. M. Cruz-Sánchez, E. Velazquez, P. F. Mateos, E. Velázquez, y E. Martínez-Molina, «Enhancement of resolution of low molecular weight RNA profiles by staircase electrophoresis», Electrophoresis, vol. 18, no. 11, pp. 1909–1911, 1997.
[54]
M. J. Martín, J. E. Velázquez, y D. Pardo, «Analysis of current fluctuations in silicon pn+ and p+n homojunctions», Journal of Applied Physics, vol. 79, no. 9, pp. 6975–6981, 1996.
[55]
M. J. Martin, T. Gonzalez, D. Pardo, y J. E. Velázquez, «Monte Carlo analysis of a Schottky diode with an automatic space-variable charge algorithm», Semiconductor Science and Technology, vol. 11, no. 3, pp. 380–387, 1996.
[56]
M. J. Martin, T. Gonzalez, J. E. Velazquez, y D. Pardo, «Simulation of electron transport in silicon: Impact-ionization processes», Semiconductor Science and Technology, vol. 8, no. 7, pp. 1291–1297, 1993.
[57]
T. González Sánchez, J. E. Velázquez Pérez, P. M. Gutiérrez Conde, y D. Pardo Collantes, «Monte Carlo analysis of the transient spectral density of velocity fluctuations in semiconductors», Applied Physics Letters, vol. 60, no. 5, pp. 613–615, 1992.
[58]
T. Gonzalez Sanchez, J. E. Velazquez Perez, P. M. Gutierrez Conde, y D. Pardo Collantes, «Electron transport in InP under high electric field conditions», Semiconductor Science and Technology, vol. 7, no. 1, pp. 31–36, 1992.
[59]
T. Gonzalez Sanchez, J. E. Velazquez Perez, P. M. Gutierrez Conde, y D. Pardo Collantes, «Five-valley model for the study of electron transport properties at very high electric fields in GaAs», Semiconductor Science and Technology, vol. 6, no. 9, pp. 862–871, 1991.